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Metal-Insulator-Metal Diodes for High Frequency Applications

Title
Metal-Insulator-Metal Diodes for High Frequency Applications
Translated Title
고주파를 이용한 다양한 응용을 위한 Metal-Insulator-Metal 다이오드
Authors
Shin, Jeong Hee
DGIST Authors
Shin, Jeong Hee; Jang, Jae Eun; Lee, Youn Gu
Advisor(s)
Jang, Jae Eun
Co-Advisor(s)
Lee, Youn Gu
Issue Date
2013
Available Date
2016-05-18
Degree Date
2013. 2
Type
Thesis
Keywords
high frequency operationterahertz (THz)metal-insulator-metal (MIM) diode테라헤르츠MIM 다이오드고속 동작
Abstract
Ultrafast electrical components have been required to apply to various devices such as the high-speed computer, the optoelectronic devices, and the communication systems. Recently for the communication field, the demanded frequency almost approaches THz range. Thus, electrical components, operated in terahertz (THz) area, should be developed. One of the challenging electrical devices is a diode, which has rectifying characteristics. Schottky diode has been used widely to convert alternative current (AC) to direct current(DC) in high frequency area. Unfortunately, the applied frequency of Schottky diodes is limited below THz level. Metal-insulator-metal (MIM) diode has been studied to overcome the frequency limit due to its fast response time. Some MIM diode results have expected theoretically an operation up to 100THz level by the nano-scale small junction dimension and the tunneling current. Therefore, from this structure we can have a motivation to solve the limit for various THz applications. Our purpose is to improve the asymmetric of I-V curve as well as the decrease of RC (resistance capacitance) constant time in MIM diode structure for high frequency rectifying performance. To achieve these purposes, a simple vertical MIM diode, a lateral MIM diode, and a metal-insulator-carbon nanotube (MIC) diode have been studied. These devices were fabricated using optical and electron beam lithography, physical vapor deposition(PVD), growth of a vertically aligned carbon nanotube by plasma enhanced chemical vapor deposition (PECVD), and lift-off process. The electric characteristics and figure of merits of these MIM diodes are investigated especially for high-speed operation. The lateral MIM and the MIC structure have shown the nonlinearity and the asymmetric characteristics depending on structural effect and work function difference. Especially in MIC diode, it shows a good rectifying performance up to 10 MHz in direct measurement mode and the estimated maximum cut-off frequency is 3.47 THz. ⓒ 2013 DGIST
Table Of Contents
Ⅰ. INTRODUCTION 1 -- 1.1 Theoretical Background 1 -- 1.1.1 p-n junction & Schottky Diode 1 -- 1.1.2 Tunnel Diode 1 -- 1.1.3 MIM tunnel Diode 5 -- 1.1.3.1 Characteristics of MIM Diode 7 -- 1.1.3.2 Theoretical Model of MIM Diode 9 -- 1.1.3.3 Factors Limiting MIM Diode 13 -- 1.1.3.4 Structure Tendency of MIM Diode 13 -- 1.2 Objective 15 -- Ⅱ. FABRICATTION 16 -- 2.1 Fabrication of Simple vertical MIM Diode 16 -- 2.2 Fabrication of Lateral MIM Diode 20 -- 2.3 Fabrication of Metal-Insulator-Carbon nanotube (MIC) Diode 22 -- Ⅲ. ELECTRIC CHARACTERISTICS AND RESULTS 28 -- 3.1 Electric Characteristics of Simple vertical MIM Diode 28 -- 3.2 Electric Characteristics of Lateral MIM Diode 33 -- 3.3 Electric Characteristics of MIC Diode 41 -- 3.4 Rectification Performance 46 -- Ⅳ. CONCLUSION 50 -- REFERENCES 52
URI
http://dgist.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002262485
http://hdl.handle.net/20.500.11750/1330
DOI
10.22677/thesis.2262485
Degree
Master
Department
Information and Communication Engineering
University
DGIST
Files:
Collection:
Information and Communication EngineeringThesesMaster


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