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dc.contributor.author Hwang, Sunwook -
dc.contributor.author Kim, Dae-Hwan -
dc.contributor.author Son, Dae-Ho -
dc.contributor.author Yang, Kee-Jeong -
dc.contributor.author Nam, Dahyun -
dc.contributor.author Cheong, Hyeonsik -
dc.contributor.author Kang, Jin-Kyu -
dc.contributor.author In, Su-il -
dc.date.available 2017-05-11T01:35:29Z -
dc.date.created 2017-04-10 -
dc.date.issued 2015-12 -
dc.identifier.issn 0927-0248 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/1559 -
dc.description.abstract In this study, CZTSSe precursors (Se/Cu/SnS/ZnS) were deposited by sputtering and evaporation and then annealed without added chalcogen substances in an argon-filled atmospheric chamber using rapid thermal processing (RTP). A low-temperature pre-annealing treatment (PAT) was applied to induce a pre-reaction between Se and Cu/SnS/ZnS. It was found that the PAT leads to the formation of CuSe and Cu2-xSe and enhances Se incorporation during RTP chalcogenization. Scanning electron microscopy (SEM), X-ray diffractometry, Raman analysis and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) were applied to investigate the differences between the absorber with the PAT and the one without the PAT. Better morphologies on the surface and in the cross section were obtained for the CZTSSe absorber annealed using the PAT compared with the absorber annealed without the PAT. Both absorbers showed nearly pure kesterite phases in their upper regions, as confirmed by Raman analysis. However, STEM-EDS maps revealed that when the absorber was prepared without the PAT, Zn- and S-rich secondary phases and voids were easily formed near the back contact. The electrical characteristics and efficiencies of the CZTSSe thin films showed drastic changes; the CZTSSe solar cell without the PAT showed no diode response, but the cell with the PAT showed an efficiency of 6.77% with an open-circuit voltage (Voc), short-circuit current density (Jsc) and fill factor (FF) of 376 mV, 31.39 mA/cm2 and 57%, respectively. © 2015 Elsevier B.V. Allrightsreserved. -
dc.language English -
dc.publisher Elsevier B.V. -
dc.title Effects of a pre-annealing treatment (PAT) on Cu2ZnSn(S,Se)(4) thin films prepared by rapid thermal processing (RTP) selenization -
dc.type Article -
dc.identifier.doi 10.1016/j.solmat.2015.06.059 -
dc.identifier.scopusid 2-s2.0-84937204224 -
dc.identifier.bibliographicCitation Solar Energy Materials and Solar Cells, v.143, pp.218 - 225 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor CZTSSe -
dc.subject.keywordAuthor Rapid thermal processing (RTP) -
dc.subject.keywordAuthor Pre-annealing treatment (PAT) -
dc.subject.keywordAuthor Selenization -
dc.subject.keywordAuthor Thin-film solar cells -
dc.subject.keywordPlus Annealing -
dc.subject.keywordPlus Atmospheric Chambers -
dc.subject.keywordPlus COPPER -
dc.subject.keywordPlus CU2ZNSNSE4 -
dc.subject.keywordPlus CZTSSe -
dc.subject.keywordPlus Efficiency -
dc.subject.keywordPlus Electrical Characteristic -
dc.subject.keywordPlus Electron Microscopy -
dc.subject.keywordPlus Energy Dispersive Spectroscopy -
dc.subject.keywordPlus Fabrication -
dc.subject.keywordPlus Film Preparation -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus Heat Treatment -
dc.subject.keywordPlus PULSED-LASER DEPOSITION -
dc.subject.keywordPlus Rapid Thermal Processing -
dc.subject.keywordPlus Rapid Thermal Processing (Rtp) -
dc.subject.keywordPlus Scanning Electron Microscopy -
dc.subject.keywordPlus Scanning Transmission Electron Microscopy -
dc.subject.keywordPlus Selenization -
dc.subject.keywordPlus Semiconducting Selenium Compounds -
dc.subject.keywordPlus SOLAR-CELLS -
dc.subject.keywordPlus TemPERATURE -
dc.subject.keywordPlus Thin-Film Solar Cells -
dc.subject.keywordPlus Thin Film Solar Cells -
dc.subject.keywordPlus Transmission Electron Microscopy -
dc.subject.keywordPlus X Ray Diffraction Analysis -
dc.subject.keywordPlus High Resolution Transmission Electron Microscopy -
dc.subject.keywordPlus LAYERS -
dc.subject.keywordPlus Low Temperatures -
dc.subject.keywordPlus Open Circuit Voltage -
dc.subject.keywordPlus Pre-Annealing Treatment (Pat) -
dc.subject.keywordPlus Preannealing -
dc.subject.keywordPlus PRECURSor SULFUR-CONTENT -
dc.subject.keywordPlus Thin Films -
dc.subject.keywordPlus ABSORBER -
dc.citation.endPage 225 -
dc.citation.startPage 218 -
dc.citation.title Solar Energy Materials and Solar Cells -
dc.citation.volume 143 -

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