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Vapor Transport Synthesis of Two-Dimensional SnS2 Nanocrystals Using a SnS2 Precursor Obtained from the Sulfurization of SnO2

Title
Vapor Transport Synthesis of Two-Dimensional SnS2 Nanocrystals Using a SnS2 Precursor Obtained from the Sulfurization of SnO2
Authors
Park, JC[Park, Jun Cheol]Lee, KR[Lee, Kyoung Ryun]Heo, H[Heo, Hoseok]Kwon, SH[Kwon, Se-Hun]Kwon, JD[Kwon, Jung-Dae]Lee, MJ[Lee, Myoung-Jae]Jeon, W[Jeon, Woojin]Jeong, SJ[Jeong, Seong-Jun]Ahn, JH[Ahn, Ji-Hoon]
DGIST Authors
Lee, MJ[Lee, Myoung-Jae]
Issue Date
2016-07
Citation
Crystal Growth and Design, 16(7), 3884-3889
Type
Article
Article Type
Article
Keywords
Annealing ConditionCommunication TechnologiesCrystal Growth TechniquesEnergy GapHexagonal SymmetryLayered StructuresMetal ChalcogenideMetalsNano-Crystalline PowdersNanocrystalsPowder MetalsSingle CrystalsTwo-Dimensional (2-D)Vapor Transport Methods
ISSN
1528-7483
Abstract
Manufacturing high-quality, two-dimensional (2D), layered materials with crystal-growth techniques is an important challenge for the advancement of 2D communication technologies. In this study, a simple method was developed for synthesizing 2D nanocrystals based on the model system of SnS2. The method involves the sulfurization of a metal oxide to a metal chalcogenide, which subsequently acts as a source of vapors for the growth of 2D crystals. The effect of the annealing conditions on the thermal sulfurization of SnO2 powder was investigated. The results showed that pure SnS2 powder could be obtained in a N2 atmosphere at 700 °C. SnS2 nanocrystals were successfully synthesized from the as-prepared SnS2 powder by the vapor transport method. The synthesized SnS2 nanocrystals had a 2D layered structure with hexagonal symmetry and exhibited typical n-type semiconducting characteristics, with an optical band gap of 2.05 eV. This novel method, which uses a preferentially prepared source for vapor transport, could provide a simple way to synthesize new types of 2D layered materials. This is because it only requires the volatilization of a source and subsequent condensation to a single crystal for the growth of 2D materials, with no complex chemical reactions occurring during vapor transport. © 2016 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/1635
DOI
10.1021/acs.cgd.6b00447
Publisher
AMER CHEMICAL SOC
Related Researcher
Files:
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Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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