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Modification of electrical and piezoelectric properties of ZnO nanorods based on arsenic incorporation via low temperature spin-on-dopant method
- Modification of electrical and piezoelectric properties of ZnO nanorods based on arsenic incorporation via low temperature spin-on-dopant method
- Sohn, JI[Sohn, Jung Inn]; Cha, SN[Cha, Seung Nam]; Kim, JM[Kim, Jong Min]; Baek, SH[Baek, Seong-Ho]; Kim, JH[Kim, Jae Hyun]; Jang, JE[Jang, Jae Eun]; Jung, YI[Jung, Yong-Il]; Park, IK[Park, Il-Kyu]
- DGIST Authors
- Baek, SH[Baek, Seong-Ho]; Kim, JH[Kim, Jae Hyun]; Jang, JE[Jang, Jae Eun]
- Issue Date
- Journal of the Korean Physical Society, 67(5), 930-935
- Article Type
- Diode; Doping; Spin-on-Dopant; ZnO Nanorod
- We report on the control of the electrical and the piezoelectric properties of ZnO nanorods (NRs) by incorporation of arsenic (As) elements via a low-temperature processed spin-on-dopant (SOD) method. The structural investigations for the SOD-treated ZnO NRs at different temperatures show a negligible change in morphology at temperatures up to 550 °C and melting of the ZnO NRs at 600 °C. Low-temperature photoluminescence (PL) spectra show gradual development of acceptor-related emission peaks with increasing SOD treatment temperature from 450 to 550 °C, which indicates the successful incorporation of As atoms into the ZnO NRs. An AsZn-2VZn shallow acceptor model is suggested by considering the formation energy of the interstitial point-defect complex for the modification of the electrical properties of ZnO NRs. A ZnO NR/n-Si heterojunction showed better rectifying behavior with increasing SOD treatment temperature, indicating better incorporation of As-dopants at higher SOD treatment temperatures. A piezoelectric nanogenerator was fabricated as a device application of the electrical-property-modified ZnO NRs. The nanogenerator showed enhanced piezoelectric output potential after doping due to the elimination of the screening effect by free charge carriers in the ZnO NRs. © 2015, The Korean Physical Society.
- Korean Physical Society
- Related Researcher
Jang, Jae Eun
Advanced Electronic Devices Research Group(AEDRG)
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