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Modification of electrical and piezoelectric properties of ZnO nanorods based on arsenic incorporation via low temperature spin-on-dopant method

Title
Modification of electrical and piezoelectric properties of ZnO nanorods based on arsenic incorporation via low temperature spin-on-dopant method
Authors
Sohn, JI[Sohn, Jung Inn]Cha, SN[Cha, Seung Nam]Kim, JM[Kim, Jong Min]Baek, SH[Baek, Seong-Ho]Kim, JH[Kim, Jae Hyun]Jang, JE[Jang, Jae Eun]Jung, YI[Jung, Yong-Il]Park, IK[Park, Il-Kyu]
DGIST Authors
Baek, SH[Baek, Seong-Ho]; Kim, JH[Kim, Jae Hyun]Jang, JE[Jang, Jae Eun]
Issue Date
2015-09
Citation
Journal of the Korean Physical Society, 67(5), 930-935
Type
Article
Article Type
Article
Keywords
DiodeDopingSpin-on-DopantZnO Nanorod
ISSN
0374-4884
Abstract
We report on the control of the electrical and the piezoelectric properties of ZnO nanorods (NRs) by incorporation of arsenic (As) elements via a low-temperature processed spin-on-dopant (SOD) method. The structural investigations for the SOD-treated ZnO NRs at different temperatures show a negligible change in morphology at temperatures up to 550 °C and melting of the ZnO NRs at 600 °C. Low-temperature photoluminescence (PL) spectra show gradual development of acceptor-related emission peaks with increasing SOD treatment temperature from 450 to 550 °C, which indicates the successful incorporation of As atoms into the ZnO NRs. An AsZn-2VZn shallow acceptor model is suggested by considering the formation energy of the interstitial point-defect complex for the modification of the electrical properties of ZnO NRs. A ZnO NR/n-Si heterojunction showed better rectifying behavior with increasing SOD treatment temperature, indicating better incorporation of As-dopants at higher SOD treatment temperatures. A piezoelectric nanogenerator was fabricated as a device application of the electrical-property-modified ZnO NRs. The nanogenerator showed enhanced piezoelectric output potential after doping due to the elimination of the screening effect by free charge carriers in the ZnO NRs. © 2015, The Korean Physical Society.
URI
http://hdl.handle.net/20.500.11750/1655
DOI
10.3938/jkps.67.930
Publisher
Korean Physical Society
Related Researcher
  • Author Jang, Jae Eun Advanced Electronic Devices Research Group(AEDRG)
  • Research Interests
Files:
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Collection:
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles


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