Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Hee Ho | - |
dc.contributor.author | Jo, Sung-Hyun | - |
dc.contributor.author | Bae, Myunghan | - |
dc.contributor.author | Choi, Byung-Soo | - |
dc.contributor.author | Kim, Jeongyeob | - |
dc.contributor.author | Lyu, Hong-Kun | - |
dc.contributor.author | Shin, Jang-Kyoo | - |
dc.date.available | 2017-07-05T08:28:44Z | - |
dc.date.created | 2017-06-25 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0914-4935 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2134 | - |
dc.description.abstract | In this research, a highly sensitive gate/body-tied metal-oxide-semiconductor field-effect transistor (MOSFET)-type photodetector with a wavelength-selective metal grid structure was designed and fabricated using 0.18-m standard complementary metal-oxide-semiconductor technology. This device is composed of a floating gate that is tied to a well and a wavelength-selective metal grid is placed on top of each photodetector. The designed metal grid structure included one-dimensional and two-dimensional patterned metal layers. The amplified photocurrent of the gate/body-tied MOSFET-type photodetector was found to be more than 1000-fold that of a conventional n+/p-sub photodiode with the same area. To demonstrate the wavelength selectivity, we measured the drain current and transmittance of the photodetector as a function of wavelength. | - |
dc.language | English | - |
dc.publisher | M Y U Scientific Publishing Division | - |
dc.title | Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology | - |
dc.type | Article | - |
dc.identifier.doi | 10.18494/SAM.2015.1079 | - |
dc.identifier.scopusid | 2-s2.0-84924763795 | - |
dc.identifier.bibliographicCitation | Sensors and Materials, v.27, no.1, pp.135 - 142 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | High sensitivity | - |
dc.subject.keywordAuthor | Metal grid | - |
dc.subject.keywordAuthor | Wavelength selectivity | - |
dc.subject.keywordAuthor | Gate/body-tied MOSFET-type photodetector | - |
dc.citation.endPage | 142 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 135 | - |
dc.citation.title | Sensors and Materials | - |
dc.citation.volume | 27 | - |
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