Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Kyongmin | - |
dc.contributor.author | Kim, Eunkyeom | - |
dc.contributor.author | Kim, Youngill | - |
dc.contributor.author | Sok, Jung Hyun | - |
dc.contributor.author | Park, Kyoungwan | - |
dc.date.available | 2017-07-05T08:30:35Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2149 | - |
dc.description.abstract | Bipolar resistive switching in ZnO/SiOx bi-layer and ZnO/SiOx/ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiOx films were grown using plasma-enhanced chemical-vapor deposition at 200 °C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was ~10 during ~100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of “micro”-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiOx layer plays an important role in resistive switching. © 2016, The Korean Physical Society. | - |
dc.publisher | Korean Physical Society | - |
dc.title | Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices | - |
dc.title.alternative | Characteristics of Resistive Switching in ZnO/SiOx Multi-Layers for Transparent Nonvolatile Memory Devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.3938/jkps.69.1798 | - |
dc.identifier.scopusid | 2-s2.0-85007575212 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.69, no.12, pp.1798 - 1804 | - |
dc.identifier.kciid | ART002186290 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Multilayer | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordPlus | BIAS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | Multilayer | - |
dc.subject.keywordPlus | Non-Volatile Memory | - |
dc.subject.keywordPlus | RAY PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | Resistive Switching | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | ZnO | - |
dc.citation.endPage | 1804 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1798 | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 69 | - |
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