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Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Title
Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
Authors
Jeong, J[Jeong, Jaewook]Kim, J[Kim, Joonwoo]Kim, D[Kim, Donghyun]Jeon, H[Jeon, Heonsu]Jeong, SM[Jeong, Soon Moon]Hong, Y[Hong, Yongtaek]
DGIST Authors
Kim, J[Kim, Joonwoo]; Jeong, SM[Jeong, Soon Moon]
Issue Date
2016-08
Citation
AIP Advances, 6(8)
Type
Article
Article Type
Article
Keywords
Amorphous FilmsAmorphous Indium-Gallium-Zinc-Oxide (A-IGZO)Amorphous SemiconductorsBack ChannelsChannel LayersEffective Channel LengthEffective MobilitiesField-Effect MobilitiesGalliumHolographic LithographyIndiumLithographyMobility EnhancementPeriodic StructuresSemiconducting Indium CompoundsThin-Film Transistors (TFTs)Thin-FilmsThin Film CircuitsZinc
ISSN
2158-3226
Abstract
In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer. © 2016 Author(s).
URI
http://hdl.handle.net/20.500.11750/2223
DOI
10.1063/1.4961379
Publisher
American Institute of Physics Publishing
Related Researcher
Files:
There are no files associated with this item.
Collection:
Smart Textile Convergence Research Group1. Journal Articles


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