DGIST Scholar: Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Division of Nanotechnology 1. Journal Articles

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Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Title: Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Author(s): Jeong, Jaewook ; Kim, Joonwoo ; Kim, Donghyun ; Jeon, Heonsu ; Jeong, Soon Moon ; Hong, Yongtaek

Keywords: Amorphous-Indium Gallium Zinc Oxides ; Amorphous Films ; Amorphous Semiconductors ; Back Channels ; Channel Layers ; Effective Channel Length ; Effective Mobilities ; Fabrication ; Field-Effect Mobilities ; Gallium ; Holographic Lithography ; Indium ; Lithography ; Mobility Enhancement ; OXIDE SemICONDUCTORS ; Periodic Structures ; Semiconducting Indium Compounds ; Thin Film Circuits ; Thin Film Transistors ; Thin Films ; Zinc

Abstract: In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer. © 2016 Author(s).