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Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

Title
Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
Authors
Kim, J[Kim, J.]Jeong, SM[Jeong, S. M.]Jeong, J[Jeong, J.]
DGIST Authors
Kim, J[Kim, J.]; Jeong, SM[Jeong, S. M.]
Issue Date
2015-11-19
Citation
Electronics Letters, 51(24), 2047-2048
Type
Article
Article Type
Article
Keywords
Active LayerAmorphous FilmsAmorphous Indium-Gallium-Zinc-Oxide (A-IGZO)Amorphous SemiconductorsDiode CircuitsDiodesElectrodesGalliumGrapheneGraphene ElectrodesGraphite ElectrodesIndiumSemiconducting Indium CompoundsSerial ConnectionThin-Film Transistors (TFTs)Thin-FilmsTransparent GrapheneTransparent Thin Film TransistorZincZinc Oxide
ISSN
0013-5194
Abstract
A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT- diode device can be applied to transparent a-IGZO and graphene integrated circuits. © 2015 The Institution of Engineering and Technology.
URI
http://hdl.handle.net/20.500.11750/2321
DOI
10.1049/el.2015.3086
Publisher
Institution of Engineering and Technology
Related Researcher
Files:
There are no files associated with this item.
Collection:
Smart Textile Convergence Research Group1. Journal Articles


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