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Spectroscopic characterization of nitrogen- and boron-doped graphene layers

Title
Spectroscopic characterization of nitrogen- and boron-doped graphene layers
Authors
Kamoi, SusumuKim, Jung GonHasuike, NoriyukiKisoda, KenjiHarima, Hiroshi
DGIST Authors
Kim, Jung Gon
Issue Date
2015
Citation
Japanese Journal of Applied Physics, 54(11)
Type
Article
Article Type
Article
Keywords
Boron-Doped GrapheneChemical Vapor Depositions (CVD)Copper SubstratesElectric Variables MeasurementElectrical Transport MeasurementsFrequency ShiftGrapheneGraphene LayersImpuritiesImpurity ConcentrationMicro Raman SpectroscopyNitrogenRaman SpectroscopySpectroscopic CharacterizationX Ray Photoelectron Spectroscopy
ISSN
0021-4922
Abstract
Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micro-Raman spectroscopy. The G and 2D peaks showed systematic frequency shift and broadening with the impurity concentration. The G peaks showed Fano-like asymmetric line shapes. These behaviors suggested the generation of free carriers by doping. XPS and electrical transport measurements also supported the systematic incorporation of impurities in graphene layers. © 2015 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/2358
DOI
10.7567/JJAP.54.115101
Publisher
Japan Society of Applied Physics
Files:
There are no files associated with this item.
Collection:
Convergence Research Center for Wellness1. Journal Articles
Emerging Materials ScienceNanoscale Optoelectronic Materials Laboratory1. Journal Articles


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