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Tunable Electrical and Optical Properties in Composition Controlled Hf:ZnO Thin Films Grown by Atomic Layer Deposition

Title
Tunable Electrical and Optical Properties in Composition Controlled Hf:ZnO Thin Films Grown by Atomic Layer Deposition
Authors
Ahn, CH[Ahn, Cheol Hyoun]Kim, JH[Kim, Jae Hyun]Cho, HK[Cho, Hyung Koun]
DGIST Authors
Kim, JH[Kim, Jae Hyun]
Issue Date
2012
Citation
Journal of the Electrochemical Society, 159(4), H384-H387
Type
Article
Article Type
Article
Keywords
Atomic Layer DepositionBand EdgeBand GapsBurstein-Moss EffectsCrystallinitiesElectric ConductivityElectrical and Optical PropertiesElectrical ResistivityHafniumHigh-Electron-DensityMetallic FilmsOptical FilmsOptical PropertiesPhase SeparationPolycrystalline Thin FilmSemiconductor Quantum WellsThin-FilmsTransparent Conductive OxidesVisible RegionX Ray Photoelectron SpectroscopyZinc OxideZnO Matrix
ISSN
0013-4651
Abstract
Hf:ZnO thin films doped with various Hf contents were prepared at 200°C by atomic layer deposition and assessed as transparent conductive oxides. Low Hf contents (≤6.7 at%) resulted in highly conductive polycrystalline thin films; high Hf contents reduced both crystallinity and conductivity due to the limited solubility of Hf in the ZnO matrix. The lowest electrical resistivity of 6 × 10 -4 Ω · cm and high electron density of 3 × 10 20 cm -3 were shown by the sample with 3.3 at% Hf. All the thin films showed ca. 80% transmittance in the visible region. The films' optical band-gaps increased from 3.29 to 3.56 eV with increasing Hf content up to 6.7 at%; further increases resulted in deviation from the Burstein-Moss effect and excess Hf incorporation induced two band edges due to phase separation, which was correlated with X-ray photoelectron spectroscopy and photoluminescence results. © 2012 The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/2479
DOI
10.1149/2.026204jes
Publisher
Electrochemical Society
Related Researcher
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Collection:
Smart Textile Convergence Research Group1. Journal Articles


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