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Work Function Modification of Indium-Tin Oxide by Surface Plasma Treatments Using Different Gases

Title
Work Function Modification of Indium-Tin Oxide by Surface Plasma Treatments Using Different Gases
Authors
Kim, KP[Kim, Kang-Pil]Hussain, AM[Hussain, A. Mohammed]Hwang, DK[Hwang, Dae-Kue]Woo, SH[Woo, Sung-Ho]Lyu, HK[Lyu, Hong-Keun]Baek, SH[Baek, Sung-Ho]Jang, Y[Jang, Youngman]Kim, JH[Kim, Jae-Hyun]
DGIST Authors
Kim, KP[Kim, Kang-Pil]Woo, SH[Woo, Sung-Ho]Lyu, HK[Lyu, Hong-Keun]; Baek, SH[Baek, Sung-Ho]; Kim, JH[Kim, Jae-Hyun]
Issue Date
2009-02
Citation
Japanese Journal of Applied Physics, 48(2)
Type
Article
Article Type
Article
Keywords
AdsorptionElectron SpectroscopyGas Permeable MembranesHighest Occupied Molecular OrbitalsHole-Injection PropertiesIndiumIndium-Tin OxidesITO Thin FilmsMolecular OrbitalsMolecular SpectroscopyOrganic LayersOrganic Light-Emitting DevicesPhotoelectricityPhotoionizationPhotonsPlasma ApplicationsPlasma TreatmentsPlasmasPotential BarriersPower Supply CircuitsSpectrum AnalysisSurface Plasma TreatmentsSurface TreatmentTinTitanium CompoundsUV Photoelectron SpectroscopiesWork-FunctionWork-Function ModificationsX-Ray Photoelectron SpectroscopiesX Ray Photoelectron Spectroscopy
ISSN
0021-4922
Abstract
We report on the effects of surface treatment with N2, O 2, and N2O plasmas on the work function of indium-tin oxide (ITO). UV photoelectron spectroscopy (UPS) showed that the work function on the ITO surface treated with N2O plasma increased more than that on the samples treated with N2 or O2 plasma. X-ray photoelectron spectroscopy (XPS) showed that the intensity of the O-O bonding peak at 532.3 eV markedly increased owing to the adsorption of O- ions on the ITO surface from breaking bonds in N2O gas by the plasma. The dipole layer formed by O- ions on the ITO surface increases the work function of ITO. Accordingly, N2O plasma treatment leads to a reduction of the potential barrier between the Fermi level of ITO and the highest occupied molecular orbital (HOMO) level of an organic layer when ITO is used as an anode for organic light-emitting devices (OLEDs) and related devices. Therefore, N2O plasma treatment enhances the hole-injection properties from the ITO thin film to the organic layer. © 2009 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/2512
DOI
10.1143/JJAP.48.021601
Publisher
Japan Society of Applied Physics
Related Researcher
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Collection:
Division of IoT∙Robotics Convergence Research1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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