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Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

Title
Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature
Authors
Song, JI[Song, Ju-Il]Park, JS[Park, Jae-Soung]Kim, H[Kim, Howoon]Heo, YW[Heo, Young-Woo]Lee, JH[Lee, Joon-Hyung]Kim, JJ[Kim, Jeong-Joo]Kim, GM[Kim, G. M.]Choi, BD[Choi, Byeong Dae]
DGIST Authors
Choi, BD[Choi, Byeong Dae]
Issue Date
2007-01-08
Citation
Applied Physics Letters, 90(2)
Type
Article
Article Type
Article
Keywords
Amorphous MaterialsGate-Source-DrainIndium CompoundsIndium Zinc OxideOpacityPartial PressureRoom-TemperatureSaturation MobilityThin-Film Transistors (TFTs)Threshold VoltageZinc Oxide
ISSN
0003-6951
Abstract
The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous Al Ox served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1 V and an on/off ratio of ∼ 106 operated as a n -type enhancement mode with saturation mobility of 0.53 cm2 V s. The devices showed optical transmittance about 80% in the visible range. © 2007 American Institute of Physics.
URI
http://hdl.handle.net/20.500.11750/2522
DOI
10.1063/1.2430917
Publisher
American Institute of Physics Publishing
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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