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dc.contributor.author Song, Ju-Il -
dc.contributor.author Park, Jae-Soung -
dc.contributor.author Kim, Howoon -
dc.contributor.author Heo, Young-Woo -
dc.contributor.author Lee, Joon-Hyung -
dc.contributor.author Kim, Jeong-Joo -
dc.contributor.author Kim, G. M. -
dc.contributor.author Choi, Byeongdae -
dc.date.available 2017-07-05T09:04:11Z -
dc.date.created 2017-04-10 -
dc.date.issued 2007-01 -
dc.identifier.citation Applied Physics Letters, v.90, no.2 -
dc.identifier.issn 0003-6951 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/2522 -
dc.description.abstract The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous Al Ox served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1 V and an on/off ratio of ∼ 106 operated as a n -type enhancement mode with saturation mobility of 0.53 cm2 V s. The devices showed optical transmittance about 80% in the visible range. © 2007 American Institute of Physics. -
dc.language English -
dc.publisher American Institute of Physics -
dc.title Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature -
dc.type Article -
dc.identifier.doi 10.1063/1.2430917 -
dc.identifier.wosid 000243582000041 -
dc.identifier.scopusid 2-s2.0-33846188498 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.citation.publicationname Applied Physics Letters -
dc.contributor.nonIdAuthor Song, Ju-Il -
dc.contributor.nonIdAuthor Park, Jae-Soung -
dc.contributor.nonIdAuthor Kim, Howoon -
dc.contributor.nonIdAuthor Heo, Young-Woo -
dc.contributor.nonIdAuthor Lee, Joon-Hyung -
dc.contributor.nonIdAuthor Kim, Jeong-Joo -
dc.contributor.nonIdAuthor Kim, G. M. -
dc.identifier.citationVolume 90 -
dc.identifier.citationNumber 2 -
dc.identifier.citationTitle Applied Physics Letters -
dc.type.journalArticle Article -
dc.description.isOpenAccess N -
dc.subject.keywordPlus Amorphous Materials -
dc.subject.keywordPlus CHANNEL LAYER -
dc.subject.keywordPlus CONDUCTING OXIDE -
dc.subject.keywordPlus DEPOSITION -
dc.subject.keywordPlus emITTING DIODE -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTOR -
dc.subject.keywordPlus Gate-Source-Drain -
dc.subject.keywordPlus Indium Compounds -
dc.subject.keywordPlus Indium Zinc Oxide -
dc.subject.keywordPlus Opacity -
dc.subject.keywordPlus OPTICAL-PROPERTIES -
dc.subject.keywordPlus Partial Pressure -
dc.subject.keywordPlus Room Temperature -
dc.subject.keywordPlus Saturation Mobility -
dc.subject.keywordPlus SOLAR-CELLS -
dc.subject.keywordPlus SYSTem -
dc.subject.keywordPlus Thin Film Transistors -
dc.subject.keywordPlus Threshold Voltage -
dc.subject.keywordPlus TIN-OXIDE -
dc.subject.keywordPlus Zinc Oxide -
dc.contributor.affiliatedAuthor Song, Ju-Il -
dc.contributor.affiliatedAuthor Park, Jae-Soung -
dc.contributor.affiliatedAuthor Kim, Howoon -
dc.contributor.affiliatedAuthor Heo, Young-Woo -
dc.contributor.affiliatedAuthor Lee, Joon-Hyung -
dc.contributor.affiliatedAuthor Kim, Jeong-Joo -
dc.contributor.affiliatedAuthor Kim, G. M. -
dc.contributor.affiliatedAuthor Choi, Byeongdae -
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