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Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant

Title
Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
Authors
Jung, JH[Jung, Jae-Hun]Lee, SJ[Lee, Seung-Joon]Lee, HJ[Lee, Hyun-Jung]Lee, MY[Lee, Min Young]Cheon, T[Cheon, Taehoon]Bae, SI[Bae, So Ik]Saito, M[Saito, Masayuki]Suzuki, K[Suzuki, Kazuharu]Nabeya, S[Nabeya, Shunichi]Lee, J[Lee, Jeongyeop]Kim, S[Kim, Sangdeok]Yeom, S[Yeom, Seungjin]Seo, JH[Seo, Jong Hyun]Kim, SH[Kim, Soo-Hyun]
DGIST Authors
Cheon, T[Cheon, Taehoon]
Issue Date
2015-11
Citation
Journal of Nanoscience and Nanotechnology, 15(11), 8472-8477
Type
Article
Article Type
Article
ISSN
1533-4880
Abstract
Ruthenium (Ru) thin films were grown on thermally-grown SiO2 substrates by plasma enhanced atomic layer deposition (PEALD) using a sequential supply of a new betadiketonate Ru metal-organic precursor, dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C16H22O6Ru) with a high vapor pressure and NH3 plasma as a reactant at the substrate temperature ranging from 175 and 310 degrees C. A self-limited film growth was confirmed at the deposition temperature of 225 degrees C and the growth rate was 0.063 nm/cycle on the SiO2 substrate with very short number of incubation cycles (approximately 10 cycles). The resistivity of PEALD-Ru films was dependent on the microstructural features characterized by grain size and crystallinity, which could be controlled by varying the deposition temperature. Ru film with the resistivity of similar to 20 mu Omega-cm and high density of 11.5 g/cm(3) was obtained at the deposition temperature as low as 225 degrees C. It formed polycrystalline structure with hexagonal-close-packed phase that was confirmed by X-ray diffractometry and transmission electronic microscopy analysis. Step coverage of PEALD-Ru film deposited with the optimum condition was good (similar to 75%) at the very small-sized trench (aspect ratio: similar to 4.5 and the top opening size of 25 nm).
URI
http://hdl.handle.net/20.500.11750/2583
DOI
10.1166/jnn.2015.11452
Publisher
American Scientific Publishers
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles


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