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dc.contributor.author Chan, Wai Pan -
dc.contributor.author Narducci, Margarita -
dc.contributor.author Gao, Yuan -
dc.contributor.author Cheng, Ming-Yuan -
dc.contributor.author Cheong, Jia Hao -
dc.contributor.author George, Arup K. -
dc.contributor.author Cheam, Daw Don -
dc.contributor.author Leong, Siew Chong -
dc.contributor.author Damalerio, Maria Ramona B. -
dc.contributor.author Lim, Ruiqi -
dc.contributor.author Tsai, Ming-Ling -
dc.contributor.author Rahman, Abdur R. A. -
dc.contributor.author Park, Mi Kyoung -
dc.contributor.author Kong, Zhi Hui -
dc.contributor.author Prashanth, Rao Jai -
dc.contributor.author Je, Minkyu -
dc.date.available 2017-07-11T05:25:12Z -
dc.date.created 2017-04-10 -
dc.date.issued 2014-11 -
dc.identifier.issn 0018-9200 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/2638 -
dc.description.abstract A fully integrated SoC for multimodality intracranial neuromonitoring is presented in this paper. Three sensors including a capacitive MEMS pressure sensor, an electrochemical oxygen sensor and a solid-state temperature sensor are integrated together in a single chip with their respective interface circuits. Chopper stabilization and dynamic element matching techniques are applied in sensor interface circuits to reduce circuit noise and offset. On-chip calibration is implemented for each sensor to compensate process variations. Measured sensitivity of the pressure, oxygen, and temperature sensors are 18.6 aF/mmHg, 194 pA/mmHg, and 2 mV/°C, respectively. Implemented in 0.18 μm CMOS, the SoC occupies an area of 1.4 mm × 4 mm and consumes 166 μW DC power. A prototype catheter for intracranial pressure (ICP) monitoring has been implemented and the performance has been verified with ex vivo experiment. © IEEE. -
dc.language English -
dc.publisher Institute of Electrical and Electronics Engineers Inc. -
dc.title A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring -
dc.type Article -
dc.identifier.doi 10.1109/JSSC.2014.2345754 -
dc.identifier.scopusid 2-s2.0-85027922193 -
dc.identifier.bibliographicCitation IEEE Journal of Solid-State Circuits, v.49, no.11, pp.2449 - 2461 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Capacitance to voltage converter (CVC) -
dc.subject.keywordAuthor capacitive pressure sensor -
dc.subject.keywordAuthor electrochemical oxygen sensor -
dc.subject.keywordAuthor intracranial pressure (ICP) -
dc.subject.keywordAuthor temperature sensor -
dc.subject.keywordAuthor traumatic brain injury (TBI) -
dc.subject.keywordPlus SMART TEMPERATURE SENSOR -
dc.subject.keywordPlus 3-SIGMA INACCURACY -
dc.subject.keywordPlus DISSOLVED-OXYGEN -
dc.subject.keywordPlus PRESSURE SENSOR -
dc.subject.keywordPlus CMOS -
dc.subject.keywordPlus COMPENSATION -
dc.subject.keywordPlus MICROSYSTEM -
dc.subject.keywordPlus WIRELESS -
dc.subject.keywordPlus 10-BIT -
dc.subject.keywordPlus INJURY -
dc.citation.endPage 2461 -
dc.citation.number 11 -
dc.citation.startPage 2449 -
dc.citation.title IEEE Journal of Solid-State Circuits -
dc.citation.volume 49 -
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Department of Electrical Engineering and Computer Science Information and Communication Engineering Research Center 1. Journal Articles

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