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Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05

Title
Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
Authors
Meixner, P[Meixner, Philipp]Lim, SJ[Lim, Seong Joon]Park, J[Park, Joonbum]Kim, JS[Kim, Jun Sung]Fischer, SF[Fischer, Saskia F.]Seo, J[Seo, Jungpil]Kuk, Y[Kuk, Young]
DGIST Authors
Seo, J[Seo, Jungpil]
Issue Date
2016-01-15
Citation
Applied Surface Science, 361, 185-189
Type
Article
Article Type
Article
Keywords
Annealing TemperaturesBi2Te2SeDepositionElectric InsulatorsHigh Energy Electron BeamsLayer-by-Layer GrowthMonolayersN-Type DopingNiobiumScanning Tunneling MicroscopyScanning Tunneling Microscopy and SpectroscopySub-MonolayersThree-Dimensional (3-D)Topological InsulatorsTransition-Metalss
ISSN
0169-4332
Abstract
While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi2Te1.95Se1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C. © 2015 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/2738
DOI
10.1016/j.apsusc.2015.11.163
Publisher
Elsevier B.V.
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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