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Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
- Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
- Meixner, P[Meixner, Philipp]; Lim, SJ[Lim, Seong Joon]; Park, J[Park, Joonbum]; Kim, JS[Kim, Jun Sung]; Fischer, SF[Fischer, Saskia F.]; Seo, J[Seo, Jungpil]; Kuk, Y[Kuk, Young]
- DGIST Authors
- Seo, J[Seo, Jungpil]
- Issue Date
- Applied Surface Science, 361, 185-189
- Article Type
- Annealing Temperatures; Bi2Te2Se; Deposition; Electric Insulators; High Energy Electron Beams; Layer-by-Layer Growth; Monolayers; N-Type Doping; Niobium; Scanning Tunneling Microscopy; Scanning Tunneling Microscopy and Spectroscopy; Sub-Monolayers; Three-Dimensional (3-D); Topological Insulators; Transition-Metalss
- While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi2Te1.95Se1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C. © 2015 Elsevier B.V. All rights reserved.
- Elsevier B.V.
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- Emerging Materials ScienceETC1. Journal Articles
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