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Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation

Title
Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation
Authors
Yun, WS[Yun, Won Seok]Lee, JD[Lee, J. D.]
DGIST Authors
Yun, WS[Yun, Won Seok]; Lee, JD[Lee, J. D.]
Issue Date
2016
Citation
Physical Chemistry Chemical Physics, 18(45), 31027-31032
Type
Article
Article Type
Article
ISSN
1463-9076
Abstract
For the practical device application of the two-dimensional semiconducting MoS2, it is a critical issue to manipulate the electronic and magnetic properties locally at its contact to the metal electrode. For the tuning of those properties, we have proposed the vacancy-defective 1L-MoS2 or the hydrogenated 1L-MoS2 at the metal [Co(0001) or Ni(111)] contacts and performed first-principles electronic structure calculations. By controlling the atomic vacancy defects and the hydrogen coverages, we investigate the Schottky barrier heights and charge and spin transfers at the interface. Our findings provide a physical insight into the practical device design using the two-dimensional MoS2. © the Owner Societies 2016.
URI
http://hdl.handle.net/20.500.11750/2790
DOI
10.1039/c6cp05384j
Publisher
Royal Society of Chemistry
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles


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