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Improved electrochemical performance of boron-doped SiO negative electrode materials in lithium-ion batteries
- Improved electrochemical performance of boron-doped SiO negative electrode materials in lithium-ion batteries
- Woo, J[Woo, Jihoon]; Baek, SH[Baek, Seong-Ho]; Park, JS[Park, Jung-Soo]; Jeong, YM[Jeong, Young-Min]; Kim, JH[Kim, Jae Hyun]
- DGIST Authors
- Baek, SH[Baek, Seong-Ho]; Park, JS[Park, Jung-Soo]; Jeong, YM[Jeong, Young-Min]; Kim, JH[Kim, Jae Hyun]
- Issue Date
- Journal of Power Sources, 299, 25-31
- Article Type
- Amorphous Silicon; Boron-Doping; Boron Doping; Carbon; Disproportionation Reaction; Disproportionation Reactions; Doping (Additives); Electric Batteries; Electrical Conductivity; Electro-Chemical Electrodes; Electro-Chemical Impedance Spectroscopy (EIS); Electrochemical Impedance Spectroscopy Measurements; Electrochemical Performance; Electrodes; Ions; Lithium; Lithium-Ion Batteries; Lithium Alloys; Lithium Compounds; Lithium Ion Batteries; Negative Electrode Material; Negative Electrode Materials; Silicon; Silicon Monoxide; Silicon Oxides; Thermal Disproportionation; Transmission Electron Microscopy
- We introduce a one-step process that consists of thermal disproportionation and impurity doping to enhance the reversible capacity and electrical conductivity of silicon monoxide (SiO)-based negative electrode materials in Li-ion batteries. Transmission electron microscope (TEM) results reveal that thermally treated SiO at 900 °C (H-SiO) consists of uniformly dispersed nano-crystalline Si (nc-Si) in an amorphous silicon oxide (SiOx) matrix. Compared to that of prinstine SiO, the electrochemical performance of H-SiO shows improved specific capacity, due mainly to the increased reversible capacity by nc-Si and to the reduced volume expansion by thermally disproportionated SiOx matrix. Further electrochemical improvements can be obtained by boron-doping on SiO (HB-SiO) using solution dopant during thermal disproportionation. HB-SiO electrode without carbon coating exhibits significantly enhanced specific capacity superior to that of undoped H-SiO electrode, having 947 mAh g-1 at 0.5C rate and excellent capacity retention of 93.3% over 100 cycles. Electrochemical impedance spectroscopy (EIS) measurement reveals that the internal resistance of the HB-SiO electrode is significantly reduced by boron doping. © 2015 Elsevier B.V.
- Elsevier B.V.
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