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Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

Title
Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy
Authors
Min, WJ[Min, Won Ja]Park, K[Park, Kyungsu]Yu, KS[Yu, Kyu-Sang]Joo, S[Joo, Sungjung]Kim, YS[Kim, Yong-Sung]Moon, DW[Moon, Dae Won]
DGIST Authors
Moon, DW[Moon, Dae Won]
Issue Date
2015-10-07
Citation
Journal of Applied Physics, 118(13)
Type
Article
Article Type
Article
Keywords
As-DopedAtomsInactive ArsenicInterface RegionsInterstitial AtomsMedium Energy Ion Scattering SpectroscopiesPlasma InteractionsSiliconSilicon OxidesTime of Flight
ISSN
0021-8979
Abstract
Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO2 are found to be in interstitial forms (Asi), while the As atoms in the bulk Si region are found to be in the substitutional form (AsSi). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented AsSi-Si-vacancy (AsSi-VSi) complex. The Asi atoms in the interface Si region are found to exist together with Si-interstitial atoms (Sii), suggesting that the Asi atoms in the interface Si region accompany the Sii atoms. © 2015 AIP Publishing LLC.
URI
http://hdl.handle.net/20.500.11750/2836
DOI
10.1063/1.4932149
Publisher
American Institute of Physics Publishing
Related Researcher
Files:
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Collection:
New BiologyETC1. Journal Articles


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