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Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy
- Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy
- Min, WJ[Min, Won Ja]; Park, K[Park, Kyungsu]; Yu, KS[Yu, Kyu-Sang]; Joo, S[Joo, Sungjung]; Kim, YS[Kim, Yong-Sung]; Moon, DW[Moon, Dae Won]
- DGIST Authors
- Moon, DW[Moon, Dae Won]
- Issue Date
- Journal of Applied Physics, 118(13)
- Article Type
- As-Doped; Atoms; Inactive Arsenic; Interface Regions; Interstitial Atoms; Medium Energy Ion Scattering Spectroscopies; Plasma Interactions; Silicon; Silicon Oxides; Time of Flight
- Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO2 are found to be in interstitial forms (Asi), while the As atoms in the bulk Si region are found to be in the substitutional form (AsSi). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented AsSi-Si-vacancy (AsSi-VSi) complex. The Asi atoms in the interface Si region are found to exist together with Si-interstitial atoms (Sii), suggesting that the Asi atoms in the interface Si region accompany the Sii atoms. © 2015 AIP Publishing LLC.
- American Institute of Physics Publishing
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