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Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Title
Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode
Authors
Kim, J[Kim, Joonwoo]Myung, S[Myung, Sung]Noh, HY[Noh, Hee-Yeon]Jeong, SM[Jeong, Soon Moon]Jeong, J[Jeong, Jaewook]
DGIST Authors
Kim, J[Kim, Joonwoo]; Noh, HY[Noh, Hee-Yeon]; Jeong, SM[Jeong, Soon Moon]
Issue Date
2015-09
Citation
AIP Advances, 5(9)
Type
Article
Article Type
Article
Keywords
Amorphous FilmsChannel RegionContact RegionsCurrent StressDrain CurrentElectrodesGalliumGrapheneGraphene ElectrodesGraphite ElectrodesPositive ShiftSemiconducting Indium CompoundsStretched ExponentialSub-Threshold SlopeThin-Film Transistors (TFTs)Thin-FilmsThreshold VoltageTransparent ElectrodeZinc
ISSN
2158-3226
Abstract
The gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode. © 2015 Author(s).
URI
http://hdl.handle.net/20.500.11750/2853
DOI
10.1063/1.4931084
Publisher
American Institute of Physics Publishing
Related Researcher
Files:
There are no files associated with this item.
Collection:
Smart Textile Convergence Research Group1. Journal Articles


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