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Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress

Title
Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress
Authors
Im, H[Im, Hwarim]Song, H[Song, Hyunsoo]Jeong, J[Jeong, Jaewook]Hong, Y[Hong, Yewon]Hong, Y[Hong, Yongtaek]
DGIST Authors
Jeong, J[Jeong, Jaewook]
Issue Date
2015-03
Citation
Japanese Journal of Applied Physics, 54(3)
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Amorphous FilmsAmorphous Indium-Gallium-Zinc-Oxide (A-IGZO)Amorphous SemiconductorsDefectsField-Effect MobilitiesHigh TemperatureHump CharacteristicIndiumPositive Gate BiasSub-Threshold RegionsSub-Threshold SwingThin-Film Transistors (TFTs)Threshold VoltageTwo-Dimensional Device Simulation
ISSN
0021-4922
Abstract
We investigated the hump characteristics of amorphous indium-gallium -zinc oxide thin-film transistors. The device showed a field effect mobility of 24.3cm2V-1 s-1, a threshold voltage (Vth) of 4.8V, and a subthreshold swing of 120mV/dec. Under positive gate bias stress, Vth showed bidirectional shift with a hump. Vth was positively and negatively shifted in the above-threshold and subthreshold regions, respectively. At high temperatures, Vth was more positively shifted without bidirectional shift. Under simultaneous drain bias stress (VDS,stress), the hump was maintained. However, the bidirectional shift was not observed with an increasing VDS,stress. The hump and positive shift are related to the defect creation of the shallow donor-like and deep-level acceptor-like states, respectively. We performed a two-dimensional device simulation to further investigate this phenomenon. By varying the peak values of the Gaussian shallow donor-like and deep acceptor-like states, we qualitatively confirmed the relationship between the two states and transfer curve changes. © 2015 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/2923
DOI
10.7567/JJAP.54.03CB03
Publisher
Institute of Physics Publishing
Files:
There are no files associated with this item.
Collection:
ETC1. Journal Articles


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