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dc.contributor.author Zhou, Jun -
dc.contributor.author Wang, Chao -
dc.contributor.author Liu, Xin -
dc.contributor.author Je, Minkyu -
dc.date.available 2017-07-11T06:01:45Z -
dc.date.created 2017-04-10 -
dc.date.issued 2015-01 -
dc.identifier.issn 0026-2692 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/2949 -
dc.description.abstract This paper presents two novel low-voltage level shifter designs: one based on cross-coupled PMOS transistors and the other using current mirror structure. These two level shifters are designed to address the problems of the existing state-of-the-art level shifters. Simulation at 65 nm shows that both of the proposed level shifters achieve significantly better performance (up to 12×) and energy consumption (up to 8×) than the state-of-the-art level shifters with similar or less area consumption while operating from near-threshold to super-threshold region, making them optimal for level shifting in low-power systems with multiple scalable voltage domains. © 2014 Elsevier Ltd. -
dc.publisher Elsevier Ltd -
dc.title Fast and energy-efficient low-voltage level shifters -
dc.type Article -
dc.identifier.doi 10.1016/j.mejo.2014.10.009 -
dc.identifier.scopusid 2-s2.0-84919915940 -
dc.identifier.bibliographicCitation Microelectronics Journal, v.46, no.1, pp.75 - 80 -
dc.subject.keywordAuthor Level shifter -
dc.subject.keywordAuthor Low voltage -
dc.subject.keywordAuthor Low power -
dc.subject.keywordAuthor Near-threshold -
dc.subject.keywordAuthor Dynamic voltage scaling (DVS) -
dc.citation.endPage 80 -
dc.citation.number 1 -
dc.citation.startPage 75 -
dc.citation.title Microelectronics Journal -
dc.citation.volume 46 -
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Department of Electrical Engineering and Computer Science Information and Communication Engineering Research Center 1. Journal Articles

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