Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Zhou, Jun | - |
dc.contributor.author | Wang, Chao | - |
dc.contributor.author | Liu, Xin | - |
dc.contributor.author | Je, Minkyu | - |
dc.date.available | 2017-07-11T06:01:45Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0026-2692 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2949 | - |
dc.description.abstract | This paper presents two novel low-voltage level shifter designs: one based on cross-coupled PMOS transistors and the other using current mirror structure. These two level shifters are designed to address the problems of the existing state-of-the-art level shifters. Simulation at 65 nm shows that both of the proposed level shifters achieve significantly better performance (up to 12×) and energy consumption (up to 8×) than the state-of-the-art level shifters with similar or less area consumption while operating from near-threshold to super-threshold region, making them optimal for level shifting in low-power systems with multiple scalable voltage domains. © 2014 Elsevier Ltd. | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Fast and energy-efficient low-voltage level shifters | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.mejo.2014.10.009 | - |
dc.identifier.scopusid | 2-s2.0-84919915940 | - |
dc.identifier.bibliographicCitation | Microelectronics Journal, v.46, no.1, pp.75 - 80 | - |
dc.subject.keywordAuthor | Level shifter | - |
dc.subject.keywordAuthor | Low voltage | - |
dc.subject.keywordAuthor | Low power | - |
dc.subject.keywordAuthor | Near-threshold | - |
dc.subject.keywordAuthor | Dynamic voltage scaling (DVS) | - |
dc.citation.endPage | 80 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 75 | - |
dc.citation.title | Microelectronics Journal | - |
dc.citation.volume | 46 | - |
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