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Novel Gated-Multiprobe Method for Measuring a Back Electrode Effect in Amorphous Oxide-Based Thin-Film Transistors

Title
Novel Gated-Multiprobe Method for Measuring a Back Electrode Effect in Amorphous Oxide-Based Thin-Film Transistors
Authors
Jeong, J[Jeong, Jaewook]Kim, J[Kim, Joonwoo]Jeong, SM[Jeong, Soon Moon]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Kim, J[Kim, Joonwoo]; Jeong, SM[Jeong, Soon Moon]
Issue Date
2014-11
Citation
IEEE Transactions on Electron Devices, 61(11), 3757-3761
Type
Article
Article Type
Article
Keywords
Amorphous Indium-Gallium-Zinc-Oxide (A-IGZO)Back ElectrodeChannel PotentialGated-Multiprobe (GMP)MultiprobesThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)
ISSN
0018-9383
Abstract
In this paper, we investigated the variations in electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors using a gated-multiprobe method when additional probe electrodes are on the back-channel region. We found that the resistance of the probe region is much smaller than that of the nonprobe region, which can be modeled by a series connection of transistors and resistors indicating that the probe region is independent of V GS and induces a decrease in effective channel length. We also performed technology computer aided design (TCAD) simulations and found that the effective channel length decreases and drain current increases, which is consistent with the experiments. © 2014 IEEE.
URI
http://hdl.handle.net/20.500.11750/3012
DOI
10.1109/TED.2014.2359964
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
Files:
There are no files associated with this item.
Collection:
Smart Textile Convergence Research Group1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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