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Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS

Title
Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS
Authors
Houssiau, L[Houssiau, L.]Noel, C[Noel, C.]Mine, N[Mine, N.]Jung, KW[Jung, K. W.]Min, WJ[Min, W. J.]Moon, DW[Moon, D. W.]
DGIST Authors
Jung, KW[Jung, K. W.]; Moon, DW[Moon, D. W.]
Issue Date
2014-11
Citation
Surface and Interface Analysis, 46, 22-24
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Amino AcidsCesiumCesium CompoundsDepth ProfilingFluencesIon BombardmentMEISPeak HeightPhenylalanineSecondary Ion Mass SpectrometrySi WaferSiliconSilicon WafersSIMSSurface LayersTOF-MEISToF-SIMS
ISSN
0142-2421
Abstract
In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe. Copyright © 2014 John Wiley & Sons, Ltd.
URI
http://hdl.handle.net/20.500.11750/3015
DOI
10.1002/sia.5614
Publisher
Wiley Blackwell
Related Researcher
Files:
There are no files associated with this item.
Collection:
New BiologyETC1. Journal Articles


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