Cited time in webofscience Cited time in scopus

Full metadata record

DC Field Value Language
dc.contributor.author Houssiau, L. -
dc.contributor.author Noel, C. -
dc.contributor.author Mine, N. -
dc.contributor.author Jung, K. W. -
dc.contributor.author Min, W. J. -
dc.contributor.author Moon, D. W. -
dc.date.available 2017-07-11T06:15:44Z -
dc.date.created 2017-04-10 -
dc.date.issued 2014-11 -
dc.identifier.citation Surface and Interface Analysis, v.46, no.S1, pp.22 - 24 -
dc.identifier.issn 0142-2421 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3015 -
dc.description.abstract In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe. Copyright © 2014 John Wiley & Sons, Ltd. -
dc.language English -
dc.publisher Wiley Blackwell -
dc.title Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS -
dc.type Article -
dc.identifier.doi 10.1002/sia.5614 -
dc.identifier.wosid 000345696200007 -
dc.identifier.scopusid 2-s2.0-84912118424 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.citation.publicationname Surface and Interface Analysis -
dc.contributor.nonIdAuthor Houssiau, L. -
dc.contributor.nonIdAuthor Noel, C. -
dc.contributor.nonIdAuthor Mine, N. -
dc.contributor.nonIdAuthor Min, W. J. -
dc.identifier.citationVolume 46 -
dc.identifier.citationNumber S1 -
dc.identifier.citationStartPage 22 -
dc.identifier.citationEndPage 24 -
dc.identifier.citationTitle Surface and Interface Analysis -
dc.type.journalArticle Article; Proceedings Paper -
dc.description.isOpenAccess N -
dc.subject.keywordAuthor ToF-MEIS -
dc.subject.keywordAuthor MEIS -
dc.subject.keywordAuthor ToF-SIMS -
dc.subject.keywordAuthor SIMS -
dc.subject.keywordAuthor cesium -
dc.subject.keywordAuthor depth profilin -
dc.subject.keywordAuthor gsilicon -
dc.subject.keywordAuthor phenylalanine -
dc.subject.keywordPlus IONS -
dc.subject.keywordPlus DESORPTION -
dc.subject.keywordPlus CESIUM -
dc.contributor.affiliatedAuthor Houssiau, L. -
dc.contributor.affiliatedAuthor Noel, C. -
dc.contributor.affiliatedAuthor Mine, N. -
dc.contributor.affiliatedAuthor Jung, K. W. -
dc.contributor.affiliatedAuthor Min, W. J. -
dc.contributor.affiliatedAuthor Moon, D. W. -
Files in This Item:

There are no files associated with this item.

Appears in Collections:
Department of New Biology NanoBio Imaging Laboratory 1. Journal Articles
Division of Energy Technology 1. Journal Articles

qrcode

  • twitter
  • facebook
  • mendeley

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE