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Growth of Eu-doped ZnO nanorods on silicon substrate by low temperature hydrothermal method

Title
Growth of Eu-doped ZnO nanorods on silicon substrate by low temperature hydrothermal method
Authors
Jung, YI[Jung, Yong-Il]Baek, SH[Baek, Seong-Ho]Park, IK[Park, Il-Kyu]
DGIST Authors
Baek, SH[Baek, Seong-Ho]
Issue Date
2013-11-01
Citation
Thin Solid Films, 546, 259-262
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Crystal Atomic StructureCrystal GrowthEuropiumHydrothermal ProcessLow-Temperature Hydrothermal MethodsLuminescence CentersNano-StructuresNanorodsOptical PropertiesOxidesPhotoluminescence SpectrumPoint DefectsPost-Thermal AnnealingSilicon SubstratesStructural InvestigationTransmission Electron MicroscopyVisible SpectraX Ray DiffractionZinc Oxide
ISSN
0040-6090
Abstract
Eu-doped ZnO nanorods (NRs) emitting several discrete lines in the visible spectrum were synthesized on silicon (100) substrates using a hydrothermal process. Structural investigations by transmission electron microscopy and X-ray diffraction showed that Eu atoms had been incorporated into the ZnO lattice without forming Eu-related alloys. The photoluminescence (PL) spectra showed discrete emission peaks from the 4% Eu-doped ZnO NRs, indicating that the doped Eu3+ ions in the ZnO NRs act luminescence centers. The PL intensity of specific emission peaks from the Eu-doped ZnO NRs increased after post thermal annealing at 500 °C assumed to be due to the annihilation of point defects in the ZnO crystal lattice. © 2013 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/3180
DOI
10.1016/j.tsf.2013.04.072
Publisher
Elsevier
Files:
There are no files associated with this item.
Collection:
Smart Textile Convergence Research Group1. Journal Articles


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