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Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

Title
Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization
Authors
Yeo, S[Yeo, Seungmin]Choi, SH[Choi, Sang-Hyeok]Park, JY[Park, Ji-Yoon]Kim, SH[Kim, Soo-Hyun]Cheon, T[Cheon, Taehoon]Lim, BY[Lim, Byoung-Yong]Kim, S[Kim, Sunjung]
DGIST Authors
Cheon, T[Cheon, Taehoon]
Issue Date
2013-11-01
Citation
Thin Solid Films, 546, 2-8
Type
Article
Article Type
Article; Proceedings Paper
Keywords
1,3-CyclohexadieneAspect RatioAtomic Layer DepositionCopperCopper MetallizationCrystallinitiesCu ElectroplatingDepositionDeposition TemperaturesFilm GrowthFilm ResistivityNucleationRutheniumSeed LayerSubstratesThin-FilmsTransmission ElectronTransmission Electron Microscopy
ISSN
0040-6090
Abstract
Ruthenium (Ru) thin films were grown on thermally-grown SiO2 substrates using atomic layer deposition (ALD) by a sequential supply of (ethylbenzene)(1,3-cyclohexadiene)Ru(0) (EBCHDRu, C14H 18Ru), and molecular oxygen (O2) at deposition temperatures ranging from 140 to 350 °C. A self-limiting film growth was confirmed at the deposition temperature of 225 °C and the growth rate was 0.1 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 2 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.43 × 1012/cm2 was obtained after 5 ALD cycles. A continuous Ru film with a thickness of ~4 nm was formed after 40 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity, microstructure, and density, and the minimum resistivity of ~14 μΩ-cm was obtained at the deposition temperature of 310 °C. The step coverage was approximately 100% at trench (aspect ratio: 4.5) with the top opening size of ~25 nm. Finally, the ALD-Ru film was evaluated in terms of its performance as a seed layer for Cu electroplating. © 2013 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/3181
DOI
10.1016/j.tsf.2013.03.074
Publisher
ELSEVIER SCIENCE SA
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles


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