Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeong, Jaewook | - |
dc.contributor.author | Lee, Gwang Jun | - |
dc.contributor.author | Kim, Joonwoo | - |
dc.contributor.author | Jeong, Soon Moon | - |
dc.contributor.author | Kim, Jung-Hye | - |
dc.date.available | 2017-07-11T06:33:51Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2013-09-07 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3205 | - |
dc.description.abstract | We analyzed the temperature-dependent electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method (GFP) with temperatures ranging from 93 to 373 K. The intrinsic field-effect mobility and source/drain parasitic resistance were separately extracted using the GFP method. We found that temperature-dependent transfer characteristics originated from the temperature-dependent intrinsic field-effect mobility of the a-IGZO TFTs. The parasitic resistance was also correlated with the intrinsic-field effect mobility, which decreases as the intrinsic field-effect mobility increases, indicating that access parasitic resistance originated from bulk regions rather than metal/semiconductor junction barrier is a key factor to determine the parasitic resistance of a-IGZO TFTs. © 2013 AIP Publishing LLC. | - |
dc.publisher | American Institute of Physics Publishing | - |
dc.title | Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4819886 | - |
dc.identifier.scopusid | 2-s2.0-84884951275 | - |
dc.identifier.bibliographicCitation | Journal of Applied Physics, v.114, no.9 | - |
dc.subject.keywordPlus | CONTACT RESISTANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | TFT | - |
dc.citation.number | 9 | - |
dc.citation.title | Journal of Applied Physics | - |
dc.citation.volume | 114 | - |
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