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Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique

Title
Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique
Authors
Hong, TE[Hong, Tae Eun]Choi, SK[Choi, Sang-Kyung]Kim, SH[Kim, Soo-Hyun]Cheon, T[Cheon, Taehoon]
DGIST Authors
Cheon, T[Cheon, Taehoon]
Issue Date
2013-04
Citation
Journal of the American Ceramic Society, 96(4), 1060-1062
Type
Article
Article Type
Article
Keywords
Aspect RatioAtomic Layer DepositionDepositionFilm ResistivityHigh DensityRutherford Back-Scattering SpectrometryStep CoverageTitanium CarbideTrench Structures
ISSN
0002-7820
Abstract
TiCx films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH2C(CH3) 3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt-structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ∼0.52 and the film resistivity was as low as ∼600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ∼4.5. © 2013 The American Ceramic Society.
URI
http://hdl.handle.net/20.500.11750/3242
DOI
10.1111/jace.12289
Publisher
Wiley Blackwell
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles


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