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Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

Title
Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors
Author(s)
Kim, Jung-HyeKim, JoonwooLee, Gwang JunJeong, JaewookChoi, Byeongdae
Issued Date
2013-01-01
Citation
Molecular Crystals and Liquid Crystals, v.586, no.1, pp.161 - 167
Type
Article
Author Keywords
a-IGZOscreen printingcopper inkthin-film transistorsource/drain electrodesoxide-based TFTs
ISSN
1542-1406
Abstract
We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm2/Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3A/A, and a subthreshold swing of 7.02 V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes. © 2013 Copyright Taylor and Francis Group, LLC.
URI
http://hdl.handle.net/20.500.11750/3271
DOI
10.1080/15421406.2013.853531
Publisher
Taylor and Francis Ltd.
Related Researcher
  • 최병대 Choi, Byeongdae 전자정보시스템연구부
  • Research Interests Display
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Appears in Collections:
Division of Nanotechnology 1. Journal Articles
Division of Electronics & Information System 1. Journal Articles

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