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Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

Title
Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors
Authors
Kim, JH[Kim, Jung-Hye]Kim, J[Kim, Joonwoo]Lee, GJ[Lee, Gwang Jun]Jeong, J[Jeong, Jaewook]Choi, B[Choi, Byeongdae]
DGIST Authors
Kim, JH[Kim, Jung-Hye]; Kim, J[Kim, Joonwoo]; Lee, GJ[Lee, Gwang Jun]; Jeong, J[Jeong, Jaewook]; Choi, B[Choi, Byeongdae]
Issue Date
2013-01-01
Citation
Molecular Crystals and Liquid Crystals, 586(1), 161-167
Type
Article
Article Type
Article
Keywords
A-IGZOCopperCopper InkElectrical CharacteristicElectrodesField-Effect MobilitiesLow-Leakage CurrentON/OFF Current RatioOxide-Based TFTsScreen PrintingSemiconducting Organic CompoundsSource/Drain ElectrodesThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)
ISSN
1542-1406
Abstract
We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm2/Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3A/A, and a subthreshold swing of 7.02 V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes. © 2013 Copyright Taylor and Francis Group, LLC.
URI
http://hdl.handle.net/20.500.11750/3271
DOI
10.1080/15421406.2013.853531
Publisher
Taylor and Francis Ltd.
Related Researcher
Files:
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Collection:
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
ETC1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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