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Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO3(ZnO)m thin films

Title
Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO3(ZnO)m thin films
Author(s)
Seo, Dong KyuKim, Jun HyeonKim, Jae HyunCho, Hyung Koun
DGIST Authors
Seo, Dong KyuKim, Jun HyeonKim, Jae HyunCho, Hyung Koun
Issued Date
2012-11
Type
Article
Article Type
Article; Conference Paper
Author Keywords
thermoelectricInGaO3(ZnO)msuperlatticeplasma treatment
ISSN
0142-2421
Abstract
Thermoelectric (TE) InGaZnO thin films grown on sapphire substrates by sputtering were optimized using a radio-frequency (RF) argon plasma treatment. The oxide thin films exhibited layered InGaO3(ZnO)2 superlattices with excellent crystallinity by using ZnO buffer layers and a post-annealing process at 900 °C. The plasma treatment under various RF powers induced excellent improvements in the electrical conductivity without structural changes. The carrier concentration was gradually increased as the RF power increased, and as a result, the TE power factor (PF) was significantly enhanced despite the reduced Seebeck coefficient. A maximum PF value was observed to be ∼0.2 × 10-5 at 500 K in the sample that was plasma treated at 150 W, where the carrier concentration was 4.9 × 10 19 cm-3. Copyright © 2012 John Wiley &Sons, Ltd.
URI
http://hdl.handle.net/20.500.11750/3319
DOI
10.1002/sia.4990
Publisher
Wiley Blackwell
Related Researcher
  • 김재현 Kim, Jae Hyun
  • Research Interests 에너지; 배터리; 고체전해질; 태양전지; 전기차; 리튬이온배터리
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Division of Energy Technology 1. Journal Articles

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