Cited 8 time in webofscience Cited 4 time in scopus

Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon-Germanium Solar Cells

Title
Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon-Germanium Solar Cells
Authors
Chung, JW[Chung, Jin-Won]Park, JW[Park, Jun Woong]Lee, YJ[Lee, Yu Jin]Ahn, SW[Ahn, Seh-Won]Lee, HM[Lee, Heon-Min]Park, OO[Park, O. Ok]
DGIST Authors
Park, OO[Park, O. Ok]
Issue Date
2012-10
Citation
Japanese Journal of Applied Physics, 51(10)
Type
Article
Article Type
Article
Keywords
A-Si:HAmorphous SiliconFill-FactorGraded LayersHydrogenationOpen Circuit VoltageSilicon AlloysSilicon GermaniumSolar CellsSolar Parameters
ISSN
0021-4922
Abstract
Hydrogenated amorphous silicon-germanium (a-SiGe:H) solar cells are fabricated with different thicknesses of the i/n graded layer and profiling shapes for appropriate band gap profiling. Comparison of the solar parameters between the U-shape profiling and the exponential shape (E-shape) profiling has been carried out at the same total thickness. In the U-shape profiling, as the thickness of the i/n graded layer increase, the fill factor (FF) and open circuit voltage (V oc) of p-i-n single-junction a-SiGe:H solar cells increase, but the short circuit current (J sc) of cells decreases. In the E-shape profiling, the J sc of the a-SiGe:H cell is enhanced without significant losses in V oc. For further analysis, a modified E-shape profiling is incorporated in a-Si:H/a-SiGe:H double-junction cells, which has resulted in the improvement of V oc and FF of doublejunction cells to 1.67 V and 0.753, respectively, without significant reduction in J sc,SiGe QE, 12.58 mA/cm 2. © 2012 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/3327
DOI
10.1143/JJAP.51.10NB16
Publisher
Institute of Physics Publishing
Files:
There are no files associated with this item.
Collection:
Energy Science and EngineeringETC1. Journal Articles


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