Cited 11 time in webofscience Cited 11 time in scopus

Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes

Title
Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes
Authors
Jeong, J[Jeong, Jaewook]Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Choi, B[Choi, Byeongdae]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Lee, GJ[Lee, Gwang Jun]; Kim, J[Kim, Joonwoo]; Choi, B[Choi, Byeongdae]
Issue Date
2012-04-04
Citation
Journal of Physics D: Applied Physics, 45(13)
Type
Article
Article Type
Article
Keywords
Amorphous Indium-Zinc-Oxide (A-IZO)Back ChannelsChannel LengthCurrent TransferDeposition ProcessElectrodesField-Effect MobilitiesGate OverlapIndium Gallium Zinc OxidesLinear RegionOutput CharacteristicsParasitic ResistancesSaturation RegionScaling DownSource/Drain ElectrodesThin-Film Transistors (TFTs)Transmission Line MethodsTransparent Source
ISSN
0022-3727
Abstract
We analysed the scaling behaviour of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) with amorphous indium zinc oxide (a-IZO) transparent source/drain (S/D) electrodes. Due to the sputtering damage of the back-channel region during the a-IZO deposition process, the output characteristics show early saturation behaviour and the field-effect mobility in the saturation region is severely decreased in comparison with that in the linear region, especially when the channel length is decreased. Based on the transmission line method, we found that a long gate overlap distance is required due to the long current transfer length. Therefore, optimizing the parasitic resistance is required for the scaling down of a-IGZO TFTs with transparent a-IZO S/D electrodes. © 2012 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/3371
DOI
10.1088/0022-3727/45/13/135103
Publisher
Institute of Physics Publishing
Related Researcher
Files:
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Collection:
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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