DGIST Scholar: Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes

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Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes

Title: Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes

Author(s): Jeong, J[Jeong, Jaewook] ; Lee, GJ[Lee, Gwang Jun] ; Kim, J[Kim, Joonwoo] ; Choi, B[Choi, Byeongdae]

DGIST Authors: Jeong, J[Jeong, Jaewook] ; Lee, GJ[Lee, Gwang Jun] ; Kim, J[Kim, Joonwoo] ; Choi, B[Choi, Byeongdae]

Subject: Amorphous Indium-Zinc-Oxide (A-IZO) ; Back Channels ; Channel Length ; Current Transfer ; Deposition Process ; Electrodes ; Field-Effect Mobilities ; Gate Overlap ; Indium Gallium Zinc Oxides ; Linear Region ; Output Characteristics ; Parasitic Resistances ; Saturation Region ; Scaling Down ; Source/Drain Electrodes ; Thin-Film Transistors (TFTs) ; Transmission Line Methods ; Transparent Source

Abstract: We analysed the scaling behaviour of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) with amorphous indium zinc oxide (a-IZO) transparent source/drain (S/D) electrodes. Due to the sputtering damage of the back-channel region during the a-IZO deposition process, the output characteristics show early saturation behaviour and the field-effect mobility in the saturation region is severely decreased in comparison with that in the linear region, especially when the channel length is decreased. Based on the transmission line method, we found that a long gate overlap distance is required due to the long current transfer length. Therefore, optimizing the parasitic resistance is required for the scaling down of a-IGZO TFTs with transparent a-IZO S/D electrodes. © 2012 IOP Publishing Ltd.