Cited 4 time in webofscience Cited 4 time in scopus

Fabrication of p-Type Silicon Nanowire Arrays with a High Aspect Ratio Using Electrochemical and Alkaline Etching

Title
Fabrication of p-Type Silicon Nanowire Arrays with a High Aspect Ratio Using Electrochemical and Alkaline Etching
Authors
Jang, HS[Jang, Hwan Soo]Choi, HJ[Choi, Ho-Jin]Kim, JH[Kim, Jae Hyun]
DGIST Authors
Jang, HS[Jang, Hwan Soo]; Choi, HJ[Choi, Ho-Jin]; Kim, JH[Kim, Jae Hyun]
Issue Date
2012-04
Citation
Journal of Nanoscience and Nanotechnology, 12(4), 3567-3570
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Alkaline EtchingAspect RatioElectrochemical EtchingEtching TimeHigh Aspect RatioKoh EtchingNanowireNanowiresP-Type SiliconPeriodic StructuresPorous SiliconSilicon MorphologySilicon NanostructuresSilicon WiresSolution ConcentrationVertical AlignmentWire
ISSN
1533-4880
Abstract
We report on the fabrication of silicon nanostructures with a high aspect ratio that were created using a combination of electrochemical etching and alkaline etching. With this technique, we were able to fabricate nano- and/or micro-wire structures that are perfectly periodic over large areas of 3.14 cm 2. After porous silicon was created by electrochemical etching, the effect of post-alkaline etching was investigated to determine how changes in the etching time, solution concentration and temperature of the etchant influenced the silicon morphology. As a result, periodic silicon wire arrays with good vertical alignment were obtained, and these arrays had a width of less than 500 nm and/or a high aspect ratio of more than 20. © 2012 American Scientific Publishers.
URI
http://hdl.handle.net/20.500.11750/3375
DOI
10.1166/jnn.2012.5591
Publisher
American Scientific Publishers
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles
ETC1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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