DGIST Scholar: Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

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Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Title: Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Author(s): Jeong, J[Jeong, Jaewook] ; Kim, J[Kim, Joonwoo] ; Lee, GJ[Lee, Gwang Jun] ; Choi, BD[Choi, Byeong-Dae]

DGIST Authors: Jeong, J[Jeong, Jaewook] ; Kim, J[Kim, Joonwoo] ; Lee, GJ[Lee, Gwang Jun] ; Choi, BD[Choi, Byeong-Dae]

Subject: Amorphous Films ; Amorphous Semiconductors ; Back Channels ; Electrical Characteristic ; Field-Effect Mobilities ; Non-Uniformity ; Parameter Extraction ; Parasitic Resistances ; Probes ; Separate Analysis ; Thin-Film Transistors (TFTs) ; Transistors

Abstract: We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ FEi) and parasitic resistance in source (R s) and drain (R d) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs. © 2012 American Institute of Physics.