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High-Purity Ultraviolet Electroluminescence from n-ZnO Nanowires/p(+)-Si Heterostructure LEDs with i-MgO Film as Carrier Control Layer

Title
High-Purity Ultraviolet Electroluminescence from n-ZnO Nanowires/p(+)-Si Heterostructure LEDs with i-MgO Film as Carrier Control Layer
Authors
Jung, BO[Jung, Byung Oh]Lee, JH[Lee, Ju Ho]Lee, JY[Lee, Jeong Yong]Kim, JH[Kim, Jae Hyun]Cho, HK[Cho, Hyung Koun]
DGIST Authors
Kim, JH[Kim, Jae Hyun]
Issue Date
2012
Citation
Journal of the Electrochemical Society, 159(2), H102-H106
Type
Article
Article Type
Article
Keywords
Active LayerAsymmetric BandsControl LayersCurrent Voltage CharacteristicsCurrent Voltage CurveDielectric LayerElectroluminescenceElectron AccumulationForward BiasHeterojunctionsHigh-PurityHole TunnelingLight-Emitting DiodesMetallorganic Chemical Vapor DepositionNanowiresRectifying CharacteristicsSiliconUltraviolet ElectroluminescenceUltraviolet LightsUV EmissionsVisible EmissionsZinc OxideZnOZnO Nanowires
ISSN
0013-4651
Abstract
Pure ultraviolet (UV) light emitting diodes (LEDs) using n-ZnO nanowires as an active layer were fabricated with an insulating MgO dielectric layer as a carrier control layer, where all depositions were continuously performed by metalorganic chemical vapor deposition. The current-voltage curve of the LEDs showed obvious rectifying characteristics, with a threshold voltage of about 7 V in the sample with 4 nm i-MgO. Under the forward bias of the samples with proper MgO thickness, a sharp UV electroluminescence, located at around 380 nm, was emitted from the active ZnO nanowires, while weak visible emission of around 450-700 nm were observed. The pure UV emission from the ZnO nanowires in the n-ZnOi-MgOp-Si heterostructures was attributed to the electron accumulation in the ZnO by asymmetric band offset and preemptive hole tunneling from Si to ZnO by i-MgO. © 2011 The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3409
DOI
10.1149/2.029202jes
Publisher
Electrochemical Society
Related Researcher
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Collection:
Smart Textile Convergence Research Group1. Journal Articles


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