Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Byung Oh | - |
dc.contributor.author | Lee, Ju Ho | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.date.available | 2017-07-11T06:59:06Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3409 | - |
dc.description.abstract | Pure ultraviolet (UV) light emitting diodes (LEDs) using n-ZnO nanowires as an active layer were fabricated with an insulating MgO dielectric layer as a carrier control layer, where all depositions were continuously performed by metalorganic chemical vapor deposition. The current-voltage curve of the LEDs showed obvious rectifying characteristics, with a threshold voltage of about 7 V in the sample with 4 nm i-MgO. Under the forward bias of the samples with proper MgO thickness, a sharp UV electroluminescence, located at around 380 nm, was emitted from the active ZnO nanowires, while weak visible emission of around 450-700 nm were observed. The pure UV emission from the ZnO nanowires in the n-ZnOi-MgOp-Si heterostructures was attributed to the electron accumulation in the ZnO by asymmetric band offset and preemptive hole tunneling from Si to ZnO by i-MgO. © 2011 The Electrochemical Society. | - |
dc.publisher | Electrochemical Society | - |
dc.title | High-Purity Ultraviolet Electroluminescence from n-ZnO Nanowires/p(+)-Si Heterostructure LEDs with i-MgO Film as Carrier Control Layer | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/2.029202jes | - |
dc.identifier.wosid | 000298637500076 | - |
dc.identifier.scopusid | 2-s2.0-84855338010 | - |
dc.identifier.bibliographicCitation | Journal of the Electrochemical Society, v.159, no.2, pp.H102 - H106 | - |
dc.subject.keywordPlus | Active Layer | - |
dc.subject.keywordPlus | Asymmetric Bands | - |
dc.subject.keywordPlus | CHemICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | Control Layers | - |
dc.subject.keywordPlus | Current Voltage Characteristics | - |
dc.subject.keywordPlus | Current Voltage Curve | - |
dc.subject.keywordPlus | Dielectric Layer | - |
dc.subject.keywordPlus | Electroluminescence | - |
dc.subject.keywordPlus | Electron Accumulation | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | Forward Bias | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | High-Purity | - |
dc.subject.keywordPlus | Hole Tunneling | - |
dc.subject.keywordPlus | LIGHT-emITTING-DIODES | - |
dc.subject.keywordPlus | Light emitting Diodes | - |
dc.subject.keywordPlus | Metallorganic Chemical Vapor Deposition | - |
dc.subject.keywordPlus | Nanowires | - |
dc.subject.keywordPlus | Rectifying Characteristics | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Ultraviolet Electroluminescence | - |
dc.subject.keywordPlus | Ultraviolet Lights | - |
dc.subject.keywordPlus | UV emissions | - |
dc.subject.keywordPlus | Visible emissions | - |
dc.subject.keywordPlus | Zinc Oxide | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordPlus | ZnO Nanowires | - |
dc.citation.endPage | H106 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | H102 | - |
dc.citation.title | Journal of the Electrochemical Society | - |
dc.citation.volume | 159 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Coatings & Films | - |
dc.type.docType | Article | - |
There are no files associated with this item.