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dc.contributor.author Park, Kwang Mook -
dc.contributor.author Lee, Myoung Bok -
dc.contributor.author Jung, Ji Hee -
dc.contributor.author Choi, Sie Young -
dc.date.available 2017-07-11T06:59:36Z -
dc.date.created 2017-04-10 -
dc.date.issued 2012 -
dc.identifier.issn 1542-1406 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3415 -
dc.description.abstract Reactive ion etching (RIE) texturing is well-known as an effective method to form the surface structure on a multi-crystalline (mc-Si) wafer that has grains with randomly oriented crystallites. The saw damage removal (SDR) process using HF/HNO 3/D.I (HND) solution was employed in this work, since the etching rate of RIE dry etching was lower than that of wet etching. The surface morphology on mc-Si surface was formed by RIE using a gas flow ratio of SF 6:O 2 = 1:1.22. The control of RF power and working pressure could etch the mc-Si surface of the 15.6 × 15.6 cm 2 area uniformly during RIE texturing process. The surface morphologies textured for 5 and 10 min were needle-like structures and sharp grass-like structures, respectively. Solar cells with the needle-like structure had higher values for open circuit voltage (V oc), short circuit current (I sc), fill factor (FF), and efficiency, despite higher reflectance compared to those with the sharp grass-like structure. The cell textured for 10 min was expected to have non-homogeneous emitter layer as the dark I-V curves of the cells textured for 5 and 10 min were compared. © 2012 Kyungil University. -
dc.publisher Taylor and Francis Ltd. -
dc.title Fabrication and Characteristics of mc-Si Solar Cells with RIE-Textured Surface -
dc.type Article -
dc.identifier.doi 10.1080/15421406.2012.693289 -
dc.identifier.wosid 000308247100015 -
dc.identifier.scopusid 2-s2.0-84865842123 -
dc.identifier.bibliographicCitation Molecular Crystals and Liquid Crystals, v.565, pp.115 - 123 -
dc.subject.keywordAuthor RIE texturing -
dc.subject.keywordAuthor SDR -
dc.subject.keywordAuthor reflectance -
dc.subject.keywordAuthor needle-like structure -
dc.subject.keywordAuthor emitter layer -
dc.subject.keywordPlus Dark I-V Curve -
dc.subject.keywordPlus emitter Layer -
dc.subject.keywordPlus emitter Layers -
dc.subject.keywordPlus Etching Rate -
dc.subject.keywordPlus Fill Factor -
dc.subject.keywordPlus Gas-Flow Ratio -
dc.subject.keywordPlus Needle-Like Structure -
dc.subject.keywordPlus Non-Homogeneous -
dc.subject.keywordPlus Open Circuit Voltage -
dc.subject.keywordPlus Reflectance -
dc.subject.keywordPlus Reflection -
dc.subject.keywordPlus RF-Power -
dc.subject.keywordPlus Rie Texturing -
dc.subject.keywordPlus Saw Damages -
dc.subject.keywordPlus SDR -
dc.subject.keywordPlus Silicon -
dc.subject.keywordPlus SILICON SOLAR-CELLS -
dc.subject.keywordPlus Silicon Wafers -
dc.subject.keywordPlus Sulfur Hexafluoride -
dc.subject.keywordPlus Surface Morphology -
dc.subject.keywordPlus Texturing -
dc.subject.keywordPlus Wet Etching -
dc.subject.keywordPlus Working Pressures -
dc.citation.endPage 123 -
dc.citation.startPage 115 -
dc.citation.title Molecular Crystals and Liquid Crystals -
dc.citation.volume 565 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Crystallography; Materials Science -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Crystallography; Materials Science, Multidisciplinary -
dc.type.docType Article -
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