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Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors

Title
Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
Authors
Son, DH[Son, Dae-Ho]Kim, DH[Kim, Dae-Hwan]Kim, JH[Kim, Jung-Hye]Sung, SJ[Sung, Shi-Joon]Jung, EA[Jung, Eun-Ae]Kang, JK[Kang, Jin-Kyu]
DGIST Authors
Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Jung, EA[Jung, Eun-Ae]; Kang, JK[Kang, Jin-Kyu]
Issue Date
2011-08-01
Citation
Thin Solid Films, 519(20), 6815-6819
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Ambient ConditionsBias StressBias VoltageChannel LayersCo-SputteringCurrent RatiosElectric PropertiesElectrical CharacteristicField-Effect MobilitiesField Effect TransistorsHafniumHafnium AdditionHfInZnOHigh-K MaterialHigh-K MaterialsIndiumIndium Zinc OxidesMetal Oxide Thin-Film TransistorMetallic CompoundsOxygen VacanciesPassivationPhotoelectron SpectroscopyPositive Gate BiasRoom-TemperatureSilicaThin-Film DevicesThin-Film Transistors (TFTs)Thin-FilmsThreshold VoltageTransistorsX Ray Photoelectron SpectroscopyZincZinc Oxide
ISSN
0040-6090
Abstract
This study reports the performance and stability of hafnium-indium zinc oxide (HfInZnO) thin film transistors (TFTs) with thermally grown SiO2. The HfInZnO channel layer was deposited at room temperature by a co-sputtering system. We examined the effects of hafnium addition on the X-ray photoelectron spectroscopy properties and on the electrical characteristics of the TFTs varying the concentration of the added hafnium. We found that the transistor on-off currents were greatly influenced by the composition of hafnium addition, which suppressed the formation of oxygen vacancies. The field-effect mobility of optimized HfInZnO TFT was 1.34 cm 2 V -1 s -1, along with an on-off current ratio of 10 8 and a threshold voltage of 4.54 V. We also investigated the effects of bias stress on HfInZnO TFTs with passivated and non-passivated layers. The threshold voltage change in the passivated device after positive gate bias stress was lower than that in the non-passivated device. This result indicates that HfInZnO TFTs are sensitive to the ambient conditions of the back surface. © 2011 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/3437
DOI
10.1016/j.tsf.2011.04.079
Publisher
Elsevier
Related Researcher
Files:
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Collection:
Division of Nano∙Energy Convergence Research1. Journal Articles
ETC1. Journal Articles


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