Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Son, Dae-Ho | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.contributor.author | Kim, Jung-Hye | - |
dc.contributor.author | Sung, Shi-Joon | - |
dc.contributor.author | Jung, Eun-Ae | - |
dc.contributor.author | Kang, Jin-Kyu | - |
dc.date.available | 2017-07-11T07:01:54Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3437 | - |
dc.description.abstract | This study reports the performance and stability of hafnium-indium zinc oxide (HfInZnO) thin film transistors (TFTs) with thermally grown SiO2. The HfInZnO channel layer was deposited at room temperature by a co-sputtering system. We examined the effects of hafnium addition on the X-ray photoelectron spectroscopy properties and on the electrical characteristics of the TFTs varying the concentration of the added hafnium. We found that the transistor on-off currents were greatly influenced by the composition of hafnium addition, which suppressed the formation of oxygen vacancies. The field-effect mobility of optimized HfInZnO TFT was 1.34 cm 2 V -1 s -1, along with an on-off current ratio of 10 8 and a threshold voltage of 4.54 V. We also investigated the effects of bias stress on HfInZnO TFTs with passivated and non-passivated layers. The threshold voltage change in the passivated device after positive gate bias stress was lower than that in the non-passivated device. This result indicates that HfInZnO TFTs are sensitive to the ambient conditions of the back surface. © 2011 Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | Elsevier | - |
dc.title | Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2011.04.079 | - |
dc.identifier.wosid | 000294790900039 | - |
dc.identifier.scopusid | 2-s2.0-80051545749 | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.519, no.20, pp.6815 - 6819 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | Metal oxide thin film transistor | - |
dc.subject.keywordAuthor | HfInZnO | - |
dc.subject.keywordAuthor | High-k material | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | Zinc | - |
dc.subject.keywordPlus | Zinc Oxide | - |
dc.subject.keywordPlus | X Ray Photoelectron Spectroscopy | - |
dc.subject.keywordPlus | Ambient Conditions | - |
dc.subject.keywordPlus | Bias Stress | - |
dc.subject.keywordPlus | Bias Voltage | - |
dc.subject.keywordPlus | Channel Layers | - |
dc.subject.keywordPlus | Cosputtering | - |
dc.subject.keywordPlus | Current Ratios | - |
dc.subject.keywordPlus | Electric Properties | - |
dc.subject.keywordPlus | Electrical Characteristic | - |
dc.subject.keywordPlus | Field-Effect Mobilities | - |
dc.subject.keywordPlus | Field Effect Transistors | - |
dc.subject.keywordPlus | Hafnium | - |
dc.subject.keywordPlus | Hafnium Addition | - |
dc.subject.keywordPlus | HfinZnO | - |
dc.subject.keywordPlus | High-K Material | - |
dc.subject.keywordPlus | High-K Materials | - |
dc.subject.keywordPlus | Indium | - |
dc.subject.keywordPlus | Indium Zinc Oxides | - |
dc.subject.keywordPlus | Metal Oxide Thin Film Transistor | - |
dc.subject.keywordPlus | Metallic Compounds | - |
dc.subject.keywordPlus | Oxygen Vacancies | - |
dc.subject.keywordPlus | Passivation | - |
dc.subject.keywordPlus | Photoelectron Spectroscopy | - |
dc.subject.keywordPlus | Positive Gate Bias | - |
dc.subject.keywordPlus | Room Temperature | - |
dc.subject.keywordPlus | Silica | - |
dc.subject.keywordPlus | Thin Film Devices | - |
dc.subject.keywordPlus | Thin Film Transistors | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Threshold Voltage | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.citation.endPage | 6819 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 6815 | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 519 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.type.docType | Article; Proceedings Paper | - |
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