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dc.contributor.author Jang, Hwan Soo -
dc.contributor.author Choi, Ho-Jin -
dc.contributor.author Kang, Sung Min -
dc.date.available 2017-07-11T07:07:26Z -
dc.date.created 2017-04-10 -
dc.date.issued 2011 -
dc.identifier.issn 1099-0062 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3482 -
dc.description.abstract In our previous work, we reported on silicon wire formation through the pit formed by metal-assisted chemical etching method as an alternative of a periodical etch pit with an inverted pyramid shape created by alkaline etching. We propose a further new process to fabricate silicon wires with a high aspect ratio not using the two-type etch pit in p-type silicon. The proposed process used a typical positive photoresist as an etching mask and a consecutive double-step current density method. The novel process is further simple and cost-effective, and decreases the number of total processes for electrochemical etching process. © 2011 The Electrochemical Society. [DOI: 10.1149/1.3594111] All rights reserved. -
dc.publisher Electrochemical Society -
dc.title Formation of p-Silicon Wire by Electrochemical Etching Using Positive Photoresist as an Etch Mask in Organic Electrolyte -
dc.type Article -
dc.identifier.doi 10.1149/1.3594111 -
dc.identifier.wosid 000291407500007 -
dc.identifier.scopusid 2-s2.0-79959200440 -
dc.identifier.bibliographicCitation Electrochemical and Solid State Letters, v.14, no.8, pp.D84 - D88 -
dc.subject.keywordAuthor current density -
dc.subject.keywordAuthor electrolytes -
dc.subject.keywordAuthor elemental semiconductors -
dc.subject.keywordAuthor etching -
dc.subject.keywordAuthor materials preparation -
dc.subject.keywordAuthor photoresists -
dc.subject.keywordAuthor semiconductor growth -
dc.subject.keywordAuthor silicon -
dc.subject.keywordAuthor wires -
dc.subject.keywordPlus Alkaline Etching -
dc.subject.keywordPlus Alkalinity -
dc.subject.keywordPlus ARRAYS -
dc.subject.keywordPlus Aspect Ratio -
dc.subject.keywordPlus Current Density -
dc.subject.keywordPlus Double-Step -
dc.subject.keywordPlus Electrochemical Etching -
dc.subject.keywordPlus Electrolytes -
dc.subject.keywordPlus Elemental Semiconductors -
dc.subject.keywordPlus Etch Mask -
dc.subject.keywordPlus Etch Pits -
dc.subject.keywordPlus Etching -
dc.subject.keywordPlus Etching Masks -
dc.subject.keywordPlus High Aspect Ratio -
dc.subject.keywordPlus MACROPOROUS SILICON -
dc.subject.keywordPlus Materials Preparation -
dc.subject.keywordPlus Metal-Assisted Chemical Etching -
dc.subject.keywordPlus Novel Process -
dc.subject.keywordPlus Organic Electrolyte -
dc.subject.keywordPlus P-Type Silicon -
dc.subject.keywordPlus Photoresists -
dc.subject.keywordPlus Porous Silicon -
dc.subject.keywordPlus Semiconductor Growth -
dc.subject.keywordPlus Silicon -
dc.subject.keywordPlus Silicon Wires -
dc.subject.keywordPlus Wire -
dc.subject.keywordPlus Wires -
dc.citation.endPage D88 -
dc.citation.number 8 -
dc.citation.startPage D84 -
dc.citation.title Electrochemical and Solid State Letters -
dc.citation.volume 14 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Electrochemistry; Materials Science -
dc.relation.journalWebOfScienceCategory Electrochemistry; Materials Science, Multidisciplinary -
dc.type.docType Article -
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