Cited 14 time in webofscience Cited 17 time in scopus

High performance and the low voltage operating InGaZnO thin film transistor

Title
High performance and the low voltage operating InGaZnO thin film transistor
Authors
Son, DH[Son, Dae-ho]Kim, DH[Kim, Dae-Hwan]Sung, SJ[Sung, Shi-Joon]Jung, EA[Jung, Eun-Ae]Kang, JK[Kang, Jin-Kyu]
DGIST Authors
Son, DH[Son, Dae-ho]; Kim, DH[Kim, Dae-Hwan]; Jung, EA[Jung, Eun-Ae]; Kang, JK[Kang, Jin-Kyu]
Issue Date
2010-11
Citation
Current Applied Physics, 10(4), E157-E160
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Electric PropertiesElectrical PropertyField-Effect MobilitiesGate DielectricsGates (Transistor)HafniumHafnium OxidesHfO2High-K MaterialHigh-K MaterialsHigh FieldLow Voltage Operating DeviceLow VoltagesMetal OxideMetallic CompoundsRF-SputteringRoom-TemperatureSilicon CompoundsSub-Threshold SwingThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Thin-FilmsThreshold VoltageVapor Deposition
ISSN
1567-1739
Abstract
In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively. © 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3496
DOI
10.1016/j.cap.2010.03.012
Publisher
Elsevier B.V.
Related Researcher
Files:
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Collection:
ETC1. Journal Articles


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