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Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

Title
Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering
Authors
Kong, BH[Kong, Bo Hyun]Han, WS[Han, Won Suk]Kim, YY[Kim, Young Yi]Cho, HK[Cho, Hyung Koun]Kim, JH[Kim, Jae Hyun]
DGIST Authors
Kim, JH[Kim, Jae Hyun]
Issue Date
2010-06
Citation
Applied Surface Science, 256(16), 4972-4976
Type
Article
Article Type
Article
Keywords
Active LayerActive RegionsDeep-Level PhotoluminescenceDiodesElectric PropertiesElectrical and Structural PropertiesElectroluminescenceElectron CarrierExtractionExtraction EfficienciesGa-DopedGallium AlloysGallium NitrideGaN LayersHeterojunctionHeterojunctionsHigh DensityHigh TemperatureIntense EmissionLeakage (Fluid)Led DeviceLight-Emitting DiodesLight EmissionOrange-RedOxide StructuresOxygenOxygen-Rich AtmospheresP-Type GanPhysical OpticsRough SurfacesSemiconducting LayerSputteringWater AnalysisZincZinc OxideZnO
ISSN
0169-4332
Abstract
We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface. © 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3517
DOI
10.1016/j.apsusc.2010.03.011
Publisher
Elsevier B.V.
Related Researcher
Files:
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Collection:
Smart Textile Convergence Research Group1. Journal Articles


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