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Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor

Title
Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor
Authors
Kang, JW[Kang, Jae Wook]Park, KW[Park, Kyung Won]Park, BN[Park, Byung Nam]Moon, KH[Moon, Kyo Ho]Choi, SY[Choi, Sie Young]Sohn, YS[Sohn, Young Soo]
DGIST Authors
Sohn, YS[Sohn, Young Soo]
Issue Date
2006
Citation
Molecular Crystals and Liquid Crystals, 459, 157-165
Type
Article
Article Type
Article
Keywords
A-Si:H Thin Film TransistorA-SiN:H Thin FilmAFMAmorphous SiliconDepositionElectron MobilityLight-Emitting DiodesRACVDRemote PECVDSurface RoughnessThin-Film Transistors (TFTs)Thin-Films
ISSN
1542-1406
Abstract
Electron mobility of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) a is important factor for a active matrix display device. The electron mobility of a-Si:H TFT is about 0.5 cm2/V•sec in current technology. If the electron mobility the of a-Si:H TFT increases to 1 ∼ 2 cm2/V•sec, TFT-LCD and OLED display can have drive IC within the panel. High-resolution display also can be made. Hydrogenated amorphous silicon nitride (a-SiN:H) thin films, as dielectric layer of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT), were deposited by radical assisted chemical vapor deposition (RACVD) and plasma enhanced chemical vapor deposition (PECVD). Interface roughness between a-SiN:H and a-Si:H is important to improve electron mobility in a-Si:H TFT. We compared surface roughness of a-SiN:H thin films deposited by RACVD and PECVD and investigated field effect mobility of a-Si:H TFTs using a-SiN:H thin film deposited by RACVD and PECVD.
URI
http://hdl.handle.net/20.500.11750/3608
DOI
10.1080/15421400600930136
Publisher
Taylor and Francis Ltd.
Files:
There are no files associated with this item.
Collection:
School of Undergraduate Studies1. Journal Articles


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