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dc.contributor.author Kang, Jae Wook -
dc.contributor.author Park, Kyung Won -
dc.contributor.author Park, Byung Nam -
dc.contributor.author Moon, Kyo Ho -
dc.contributor.author Choi, Sie Young -
dc.contributor.author Shon, Young-Soo -
dc.date.available 2017-07-11T07:21:04Z -
dc.date.created 2017-04-10 -
dc.date.issued 2006-12 -
dc.identifier.issn 1542-1406 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3608 -
dc.description.abstract Electron mobility of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) a is important factor for a active matrix display device. The electron mobility of a-Si:H TFT is about 0.5 cm2/V•sec in current technology. If the electron mobility the of a-Si:H TFT increases to 1 ∼ 2 cm2/V•sec, TFT-LCD and OLED display can have drive IC within the panel. High-resolution display also can be made. Hydrogenated amorphous silicon nitride (a-SiN:H) thin films, as dielectric layer of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT), were deposited by radical assisted chemical vapor deposition (RACVD) and plasma enhanced chemical vapor deposition (PECVD). Interface roughness between a-SiN:H and a-Si:H is important to improve electron mobility in a-Si:H TFT. We compared surface roughness of a-SiN:H thin films deposited by RACVD and PECVD and investigated field effect mobility of a-Si:H TFTs using a-SiN:H thin film deposited by RACVD and PECVD. -
dc.language English -
dc.publisher Taylor & Francis -
dc.title Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor -
dc.type Article -
dc.identifier.doi 10.1080/15421400600930136 -
dc.identifier.wosid 000242551600016 -
dc.identifier.scopusid 2-s2.0-33845337331 -
dc.identifier.bibliographicCitation Molecular Crystals and Liquid Crystals, v.459, no.1, pp.157 - 165 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor AFM -
dc.subject.keywordAuthor a-SiN : H thin film -
dc.subject.keywordAuthor a-Si : H thin film transistor -
dc.subject.keywordAuthor RACVD -
dc.subject.keywordAuthor remote PECVD -
dc.subject.keywordPlus A-Si:H Thin Film Transistor -
dc.subject.keywordPlus A-Sin:H Thin Film -
dc.subject.keywordPlus AFM -
dc.subject.keywordPlus Amorphous Silicon -
dc.subject.keywordPlus DEPOSITION -
dc.subject.keywordPlus Electron Mobility -
dc.subject.keywordPlus Light emitting Diodes -
dc.subject.keywordPlus RACVD -
dc.subject.keywordPlus Remote PECVD -
dc.subject.keywordPlus Surface Roughness -
dc.subject.keywordPlus Thin Film Transistors -
dc.subject.keywordPlus Thin Films -
dc.citation.endPage 165 -
dc.citation.number 1 -
dc.citation.startPage 157 -
dc.citation.title Molecular Crystals and Liquid Crystals -
dc.citation.volume 459 -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Crystallography; Materials Science -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Crystallography; Materials Science, Multidisciplinary -
dc.type.docType Article -
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