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Effect of porous graphite for high quality SiC crystal growth by PVT method

Title
Effect of porous graphite for high quality SiC crystal growth by PVT method
Authors
Lee, H.-J.Lee, H.-T.Shin, H.-W.Park, M.-S.Jang, Y.-S.Lee, W.-J.Yeo, I.-G.Eun, T.-H.Kim, J.-Y.Chun, M.-C.Lee, S.-H.Kim, J.-G.
DGIST Authors
Kim, J.-G.
Issue Date
2015
Citation
European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, 821-823, 43-46
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
0255-5476
Abstract
The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a more C-rich for the polytype stability of 4H-SiC crystal and a uniform radial temperature gradient. The dendrite structure obtained from SiC source powder in the crucible with porous graphite plate was more densely formed than that in the conventional crucible. The crystal quality of 4H-SiC single crystals grown in porous graphite inserted crucible was revealed to be better than that of crystal grown SiC crystals in the conventional crucible. © (2015) Trans Tech Publications, Switzerland.
URI
http://hdl.handle.net/20.500.11750/3708
DOI
10.4028/www.scientific.net/MSF.821-823.43
Publisher
Trans Tech Publications Ltd
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceNanoscale Optoelectronic Materials Laboratory2. Conference Papers


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