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High-sensitivity active pixel sensor with a variable threshold photodetector

Title
High-sensitivity active pixel sensor with a variable threshold photodetector
Authors
Jo, Sung-HyunBae, MyunghanChoi, Byoung-SooLyu, Hong-KunShin, Jang_Kyoo
DGIST Authors
Lyu, Hong-Kun
Issue Date
2015
Citation
Image Sensing Technologies: Materials, Devices, Systems, and Applications II, 9481
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
0277-786X
Abstract
A novel high-sensitivity active pixel sensor (APS) with a variable threshold photodetector has been presented and for the first time, a simple SPICE model for the variable threshold photodetector is presented. Its SPICE model is in good agreement with measurements and is more simpler than the conventional model. The proposed APS has a gate/body-tied PMOSFET-type photodetector with an overlapping control gate that makes it possible to control the sensitivity of the proposed APS. It is a hybrid device composed of a metal-oxide-semiconductor field-effect transistor (MOSFET), a lateral bipolar junction transistor (BJT) and a vertical BJT. Using sufficient overlapping control gate bias to operate the MOSFET in inversion mode, the variable threshold photodetector allows for increasing the photocurrent gain by 105 at low light intensities when the control gate bias is -3 V. Thus, the proposed APS with a variable threshold photodetector has better low-light-level sensitivity than the conventional APS operating mode, and it has a variable sensitivity which is determined by the control gate bias. The proposed sensor has been fabricated by using 0.35 μm 2-poly 4-metal standard complementary MOS (CMOS) process and its characteristics have been evaluated. © 2015 SPIE.
URI
http://hdl.handle.net/20.500.11750/3726
DOI
10.1117/12.2189913
Publisher
SPIE
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group2. Conference Papers


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