Improvement of light extraction efficiency in n-ZnO:Ga/I-ZnO/p-Si heterojunction LED using truncated pyramid patterned Si substrates
- Title
- Improvement of light extraction efficiency in n-ZnO:Ga/I-ZnO/p-Si heterojunction LED using truncated pyramid patterned Si substrates
- Author(s)
- Kim, Jae Hyun ; Choi, Mi Kyung ; Seo, Hong-Seok ; Han, Won Suk ; Kim, Young Yi ; Kong, Bo Hyun ; Cho, Hyung Koun ; Lee, Jung-Ho
- Issued Date
- 2009
- Citation
- Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium - 216th ECS Meeting, v.25, no.9, pp.177 - 182
- Type
- Conference Paper
- ISBN
- 9780000000000
- ISSN
- 1938-5862
- Abstract
- n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes (LEDs) were fabricated using patterned Si substrates having larger junction area than normal flat ones where recombined photons are generated. The patterned p-type Si substrates were prepared by anodization which is very cost competitive method, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. The truncated patterning of the substrates resulted in approximately 75 % improvement in output power compared with the LED without the pattern, which was attributed to a 1.33-fold increase in the junction area through patterning. © The Electrochemical Society.
- Publisher
- Electrochemical Society
- Related Researcher
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Kim, Jae Hyun 에너지환경연구부
- Research Interests 에너지; 배터리; 고체전해질; 태양전지; 전기차; 리튬이온배터리
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- Appears in Collections:
- Division of Energy Technology 2. Conference Papers
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