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Improvement of light extraction efficiency in n-ZnO:Ga/I-ZnO/p-Si heterojunction LED using truncated pyramid patterned Si substrates

Title
Improvement of light extraction efficiency in n-ZnO:Ga/I-ZnO/p-Si heterojunction LED using truncated pyramid patterned Si substrates
Authors
Kim, Jae HyunChoi, Mi KyungSeo, Hong-SeokHan, Won SukKim, Young YiKong, Bo HyunCho, Hyung KounLee, Jung-Ho
DGIST Authors
Kim, Jae Hyun
Issue Date
2009
Citation
Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium - 216th ECS Meeting, 25(9), 177-182
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
1938-5862
Abstract
n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes (LEDs) were fabricated using patterned Si substrates having larger junction area than normal flat ones where recombined photons are generated. The patterned p-type Si substrates were prepared by anodization which is very cost competitive method, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. The truncated patterning of the substrates resulted in approximately 75 % improvement in output power compared with the LED without the pattern, which was attributed to a 1.33-fold increase in the junction area through patterning. © The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3973
DOI
10.1149/1.3211175
Publisher
Electrochemical Society
Related Researcher
Files:
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Collection:
Smart Textile Convergence Research Group2. Conference Papers


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