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Macropore formation in p-type silicon and Si/SiGe/Si/SiGe/p-type silicon

Title
Macropore formation in p-type silicon and Si/SiGe/Si/SiGe/p-type silicon
Authors
Kim, Jae HyunSeo, Hong-SeokKim, K. PhilLyu, Hong-KeunWoo, Sung-HoLee, Jung Ho
DGIST Authors
Kim, Jae HyunKim, K. PhilLyu, Hong-KeunWoo, Sung-Ho
Issue Date
2008
Citation
Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting, 16(3), 277-283
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
1938-5862
Abstract
Random and ordered macropore formation in p-type silicon substrate (10-20 Ω·cm) by electrochemical anodization in various HF-containing electrolytes was investigated under different operating conditions. The effect of electrolyte composition controlling the macropore formation both for random and periodically arranged pores is reported. The role played by etch pit for ordered macropore formation was investigated. The results revealed that the nature of constituents of solution plays very important roles in determining pore formation and morphology and the stable ordered macropore growth is not possible without etch pit. By using Si/SiGe/Si/SiGe/p-type silicon structure, ordered pillar structures were fabricated without etch pit formation process. The possible role of two sets of Si/SiGe layer for pillar formation is proposed. © The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3992
DOI
10.1149/1.2982566
Publisher
Electrochemical Society
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Collection:
Division of IoT∙Robotics Convergence Research2. Conference Papers
Intelligent Devices and Systems Research Group2. Conference Papers


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