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Effect of the sputtering condition on the LC alignment properties of SiO2 layer

Title
Effect of the sputtering condition on the LC alignment properties of SiO2 layer
Authors
Sung, Shi-JoonYang, Kee-JeongKim, Dae-HwanDo, Yun SeonChoi, Byeong Dae
DGIST Authors
Sung, Shi-Joon; Yang, Kee-JeongKim, Dae-Hwan; Do, Yun Seon; Choi, Byeong Dae
Issue Date
2008
Citation
2008 SID International Symposium, 39(3), 1792-1794
Type
Conference
Article Type
Conference Paper
ISSN
0097-966X
Abstract
The relationship between the sputtering condition and the LC alignment properties of SiO2 layer was investigated. According to the RF power of sputtering, the Ar pressure showed a different effect on the LC alignment on SiO2 layers, which might be closely related with the thin layer formation process. © 2008 SID.
URI
http://hdl.handle.net/20.500.11750/3997
DOI
10.1889/1.3069526
Publisher
Wiley
Related Researcher
Files:
There are no files associated with this item.
Collection:
ETC2. Conference Papers
Division of Nano∙Energy Convergence Research2. Conference Papers
Convergence Research Center for Solar Energy2. Conference Papers


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